Spin filtering effect, thermal spin diode effect and high tunneling magnetoresistance in the Au/GdI2/Au van der Waals junction
Lei Hu,Xuming Wu,Yulin Feng,Yuqi Liu,Zhiyuan Xu,Guoying Gao
DOI: https://doi.org/10.1039/d2nr01757a
IF: 6.7
2022-05-07
Nanoscale
Abstract:2D van der Waals magnets have been widely concerned in spintronics because of their unique electronic properties, no dangling bonds, and ultra-clean interfaces. However, most of them possess lower Curie temperatures. Motivated by the recent discovery of near room-temperature ferromagnetic semiconductor in monolayer GdI2, we propose the Au/GdI2/Au vertical van der Waals junction and investigate the bias-voltage- and temperature-gradient-dependent spin transport characteristics by using the density functional theory and the non-equilibrium Green's function method. It is found that, likewise bulk GdI2, the four-layer GdI2 in the central scattering region of the junction exhibits intralayer ferromagnetism with weak interlayer antiferromagnetic coupling. The almost 100% spin polarization can be obtained whether at a bias voltage or at a temperature gradient for the junction, meanwhile high tunneling magnetoresistances are observed at a large bias voltage range or at a large temperature gradient range, which can reach 29000% and 3600%, respectively. The junction also exhibits a thermal spin diode effect. These versatile bias voltage and temperature gradient driven spin transport properties are understood from the calculated spin-dependent band structure of layered GdI2 and the spin-dependent transmission spectrum and density of states of the junction. The present work highlights layered GdI2 as a promising magnetic tunnel barrier for van der Waals spintronic devices and spin caloritronic devices.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry