Crystalline-amorphization-recrystallization Structural Transition and Emergent Superconductivity in Van Der Waals Semiconductor SiP under Compression
Chunhua Chen,Zhenyu Ding,Yonghui Zhou,Yifang Yuan,Nixian Qian,Jing Wang,Shuyang Wang,Ying Zhou,Chao An,Min Zhang,Xuliang Chen,Xiaoping Yang,Mingliang Tian,Zhaorong Yang
DOI: https://doi.org/10.1007/s11433-023-2325-x
2024-01-01
Abstract:van der Waals (vdW) semiconductors have gained significant attention due to their unique physical properties and promising applications, which are embedded within distinct crystallographic symmetries. Here, we report a pressure-induced crystalline-amorphization-recrystallization transition under compression in binary vdW semiconductor SiP. Upon compression to 52 GPa, bulk SiP undergoes a consecutive phase transition from pristine crystalline to amorphous phase, ultimately to recrystallized phase. By employing synchrotron X-ray diffraction experiments in conjunction with high-pressure crystal structure searching techniques, we reveal that the recrystallized SiP hosts a tetragonal structure (space group I4mm) and further transforms partially into a cubic phase (space group Fm3̅m ). Consistently, electrical transport and alternating-current magnetic susceptibility measurements indicate the presence of three superconducting phases, which are embedded in separate crystallographic symmetries—the amorphous, tetragonal, and cubic structures. Furthermore, a high superconducting transition temperature of 12.3 K is observed in its recovered tetragonal phase during decompression. Our findings uncover a novel phase evolution path and elucidate a pressure-engineered structure-property relationship in vdW semiconductor SiP. These results not only offer a new platform to explore the transformation between different structures and functionalities, but also provide new opportunities for the design and exploration of advanced devices based on vdW materials.