Temperature-dependent Electrical Transport Mechanism in Amorphous Ge2Sb2Te5films

H. Y. Wu,W. Wang,W. J. Lu
DOI: https://doi.org/10.1002/pssb.201600045
2016-01-01
Abstract:We study the electrical transport mechanism of amorphous Ge2Sb2Te5 (GST) phase-change memory material. Amorphous GST films with 10-100 nm thicknesses were fabricated in tri-layer geometry by using metal top and bottom electrodes. The temperature and voltage bias dependences of the electrical conductance were measured and analyzed using different models. Thermally activated conductance was observed at high temperatures. The estimated activation energy E-a and carrier density n were 0.36-0.45 eV and similar to 10(18) cm(-3), respectively. With a de-crease in temperature, variable-range-hopping (VRH) conductivity was induced in moderate temperature range (150-250 K), which was associated with the diffusive regime. At low temperatures (T < 50 K), electrical transport occurred predominantly by inelastic hopping through directed chains of localized states. The localized electronic states of amorphous GST were observed experimentally by our tunneling density-of-states (DOS) measurements. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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