Parasitic Analysis and Π-Type Butterworth-Van Dyke Model for Complementary-Metal-oxide-semiconductor Lamb Wave Resonator with Accurate Two-Port Y-parameter Characterizations.

Yong Wang,Wang Ling Goh,Kevin T. -C. Chai,Xiaojing Mu,Yan Hong,Piotr Kropelnicki,Minkyu Je
DOI: https://doi.org/10.1063/1.4945801
IF: 1.6
2016-01-01
Review of Scientific Instruments
Abstract:The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-circuit model for Lamb wave resonators, especially for those fabricated on silicon technology. The proposed model is a hybrid π-type Butterworth-Van Dyke (PiBVD) model that accounts for the above mentioned parasitic effects which are commonly observed in Lamb-wave resonators. It is a combination of interdigital capacitor of both plate capacitance and fringe capacitance, interdigital resistance, Ohmic losses in substrate, and the acoustic motional behavior of typical Modified Butterworth-Van Dyke (MBVD) model. In the case studies presented in this paper using two-port Y-parameters, the PiBVD model fitted significantly better than the typical MBVD model, strengthening the capability on characterizing both magnitude and phase of either Y11 or Y21. The accurate modelling on two-port Y-parameters makes the PiBVD model beneficial in the characterization of Lamb-wave resonators, providing accurate simulation to Lamb-wave resonators and oscillators.
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