Very High Quantum Efficiency in InAs/GaSb Superlattice for Very Long Wavelength Detection with Cutoff of 21 Μm

Dongwei Jiang,Wei Xiang,Fengyun Guo,Hongyue Hao,Xi Han,Xiaochao Li,Guowei Wang,Yingqiang Xu,Qingjiang Yu,Zhichuan Niu
DOI: https://doi.org/10.1063/1.4944849
IF: 4
2016-01-01
Applied Physics Letters
Abstract:The authors report the dependence of the quantum efficiency on beryllium concentration in the active region of type-II InAs/GaSb superlattice infrared detector with a cutoff wavelength around 21 μm. It is found that the quantum efficiency and responsivity show a clear delineation in comparison to the doping concentration. The quantum efficiency is further improved by gradually doping in the absorbing region. At 77 K, the 50% cutoff wavelength of the VLWIR detector is 18 μm, and the R0A is kept at a stable value of 6 Ω cm2. Different beryllium concentration leads to an increase of an average quantum efficiency in the 8–15 μm window from 35% to 55% with a π-region thickness of 3.0 μm, for Ubias = −0.3 V, and no anti-reflection coating. As for a further result, the quantum efficiency reaches at a maximum value of 66% by gradually doping in the absorbing region with the peak detectivity of 3.33 × 1010 cm Hz1/2/W at 15 μm.
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