In Situ Carrier Tuning in High Temperature Superconductor Bi_2Sr_2CaCu_2O_8+δ by Potassium Deposition
Yuxiao Zhang,Cheng Hu,Yong Hu,Lin Zhao,Ying Ding,Xuan Sun,Aiji Liang,Yan Zhang,Shaolong He,Defa Liu,Li Yu,Guodong Liu,Xiaoli Dong,Genda Gu,Chuangtian Chen,Zuyan Xu,Xingjiang Zhou
DOI: https://doi.org/10.1007/s11434-016-1106-y
IF: 18.9
2016-01-01
Science Bulletin
Abstract:We report a successful tuning of the hole doping level over a wide range in high temperature superconductor Bi_2Sr_2CaCu_2O_8+δ (Bi2212) through successive in situ potassium (K) deposition. By taking high resolution angle-resolved photoemission measurements on the Fermi surface and band structure of an overdoped Bi2212 ( T_c=76 K) at different stages of K deposition, we found that the area of the hole-like Fermi surface around the Brillouin zone corner ( π , π ) shrinks with increasing K deposition. This indicates a continuous hole concentration change from initial ∼ 0.26 to eventual 0.09 after extensive K deposition, a net doping level change of 0.17 that makes it possible to bring Bi2212 from being originally overdoped, to optimally-doped, and eventually becoming heavily underdoped. The electronic behaviors with K deposition are consistent with those of Bi2212 samples with different hole doping levels. These results demonstrate that K deposition is an effective way of in situ controlling the hole concentration in Bi2212. This work opens a good way of studying the doping evolution of electronic structure and establishing the electronic phase diagram in Bi2212 that can be extended to other cuprate superconductors.