Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors
Jiamin Sun,Meng Peng,Yushuang Zhang,Lei Zhang,Rui Peng,Chengcheng Miao,Dong Liu,Mingming Han,Runfa Feng,Yandong Ma,Ying Dai,Longbing He,Chongxin Shan,Anlian Pan,Weida Hu,Zai-xing Yang
DOI: https://doi.org/10.1021/acs.nanolett.9b01503
IF: 10.8
2019-01-01
Nano Letters
Abstract:Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronic and photoelectronic devices has stagnated in the past decade. During a typical catalyst-assisted chemical vapor deposition (CVD) process, the adopted metallic catalyst can be incorporated into the NW body to act as a slight dopant, thus regulating the electrical properties of the NW. In this work, we demonstrate the use of Sn as a catalyst and dopant for GaSb NWs in the surfactant-assisted CVD growth process. The Sn-catalyzed zinc-blende GaSb NWs are thin, long, and straight with good crystallinity, resulting in a record peak hole mobility of 1028 cm2 V-1 s-1. This high mobility is attributed to the slight doping of Sn atoms from the catalyst tip into the NW body, which is verified by the red-shifted photoluminescence peak of Sn-catalyzed GaSb NWs (0.69 eV) compared with that of Au-catalyzed NWs (0.74 eV). Furthermore, the parallel array NWs also show a high peak hole mobility of 170 cm2 V-1 s-1, a high responsivity of 61 A W-1, and fast rise and decay times of 195.1 and 380.4 μs, respectively, under the illumination of 1550 nm infrared light. All of the results demonstrate that the as-prepared Sn-catalyzed GaSb NWs are promising for application in next-generation electronics and optoelectronics.