Abstract:In spite of remarkable developments in the field of advanced materials, silicon remains one of the foremost semiconductors of the day. Of enduring relevance to science and technology is silicon's nanomechanical behaviour including phase transformation, amorphization and dislocations generation, particularly in the context of molecular dynamics and materials research. So far, comprehensive modelling of the whole cycle of events in silicon during nanoscale deformation has not been possible, however, due to the limitations inherent in the existing interatomic potentials. This paper examines how well an unconventional combination of two well-known potentials - the Tersoff and Stillinger-Weber - can perform in simulating that complexity. Our model indicates that an irreversible deformation of silicon (Si-I) is set in motion by a transformation to a non-diamond structure (Si-nd), and followed by a subsequent transition to the Si-II and Si-XII phases (Si-1→Si-nd→Si-II→Si-XII). This leads to the generation of dislocations spreading outwards from the incubation zone. In effect, our simulations parallel the structural changes detected experimentally in the deformed material. This includes both the experimentally observed sequence of phase transitions and dislocation activity, which - taken together - neither the Tersoff nor Stillinger-Weber, or indeed any other available Si interatomic potential, is able to achieve in its own right. Notably, the Si-XII phase was not discerned by any of the previous computational models, which points towards the effectiveness of our integrated approach to forecasting novel phenomena discovered by advanced structure examinations. Last not least, our method satisfies the demand for a quick means to construct potentials by opening up the huge library of existing models to new applications in various branches of materials science.

Deformation Induced New Pathways in Silicon.

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

In Situ Tem Study of Deformation-Induced Crystalline-To-Amorphous Transition in Silicon

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Nanoindentation of polysilicon and single crystal silicon: Molecular dynamics simulation and experimental validation

The Simultaneous Determination of the Forces and Viscoelastic Properties of Adsorbed Polymer Layers.

On the deformation mechanism of SiC under nano-scratching: An experimental investigation

Uniting Ultrahigh Plasticity with Near‐Theoretical Strength in Submicron‐Scale Si via Surface Healing

Numerical and experimental investigation on ductile deformation and subsurface defects of monocrystalline silicon during nano-scratching

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Comprehensive structural changes in nanoscale-deformed silicon modelled with an integrated atomic potential

Atomistic perspective on in situ nanomechanics

Nanoindentation Characterization of Single-Crystal Silicon with Oxide Film

Nanoindentation-Induced Phase Transformation in Silicon

Atomistic deformation mechanism of silicon under laser-driven shock compression

Fracture of a silicon nanowire at ultra-large elastic strain

Surface Evolution and Stability Transition of Silicon Wafer Subjected to Nano-Diamond Grinding

Depth-sensing ductile and brittle deformation in 3C-SiC under Berkovich nanoindentation

Influence of Anisotropy on Material Removal and Deformation Mechanism Based on Nanoscratch Tests of Monocrystal Silicon