Abstract:High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi2Sr2Ca0.6Dy0.4Cu2O8+delta (Bi2212) sample surface to push its doping level continuously from deeply underdoped (Tc=25 K, doping level p-0.066) to the near zero doping parent Mott insulator, angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed electronic structure evolution in lightly hole-doped region for the first time. Our results indicate that the chemical potential lies at about 1 eV above the charge transfer band for the parent state at zero doping which is quite close to the upper Hubbard band. With increasing hole doping, the chemical potential moves continuously towards the charge transfer band and the band structure evolution exhibits a rigid band shift-like behavior. When the chemical potential approaches the charge transfer band at a doping level of -0.05, the nodal spectral weight near the Fermi level increases, followed by the emergence of the coherent quasiparticle peak and the insulator-superconductor transition. Our observations provide key insights in understanding the insulator-superconductor transition in doping the parent cuprate compound and for establishing related theories.

Preparation of Underdoped Single Crystals

Preparation Of Underdoped Bi2sr2ca2cu3o10+Delta Single Crystals

Preparation and Superconductivity of the High-Tc Phase of Pb-doped Bi-Sr-Ca-Cu-O Superconductor

Growth and Characterization of HgBa2CaCu2O6+δ and HgBa2Ca2Cu3O8+δ Crystals

Pseudogap Opening, Superconducting Fluctuation and Vortex-Like Excitation above Tc in Slightly Overdoped Bi2Sr2CaCu2O8+δ

Growth and Characterization of High-Quality Single Crystals of Ni- and Zn-Doped Bi 2 Sr 2 Ca(Cu 2− X M X )O 8+δ (M = Ni or Zn) High-Temperature Superconductors

Growth and characterization of HgBa2CaCu2O6+d and HgBa2Ca2Cu3O8+d crystals

Preparation of 110k Superconductor in Bi-Sr-Ca-Cu-O System

Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8 + Δ*

Crystal Growth and Characterization of HgBa2Ca2Cu3O8+δ Superconductor with the Highest Critical Temperature at Ambient Pressure

Preparation And Phase Research Of The 110-K High-Tc Superconductor Bi2sr2ca2cu3oy Doped With Sb And Pb

Mapping the Electronic Structure of Each Ingredient Oxide Layer of High-TcCuprate SuperconductorBi2Sr

Preparation and Superconductivity of Bi3PbCa3Sr3Cu4Oy

High-Quality Large-Sized Single Crystals of Pb-Doped Bi 2 Sr 2 CuO 6+δ High- T C Superconductors Grown with Traveling Solvent Floating Zone Method

Rapid change of superconductivity and electron-phonon coupling through critical doping in Bi-2212

Growth and Characterization of HgBa2CaCu2O6+δ and HgBa2…

Shallow core levels, or how to determine the doping and $T_c$ of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ and Bi$_{2}$Sr$_2$CuO$_{6+δ}$ without cooling

Demonstrating the Model Nature of the High-Temperature Superconductor HgBa_2CuO_4+Δ

Anomalous Doping Evolution Of Superconductivity And Quasiparticle Interference In Bi2sr2ca2cu3o10+Delta Trilayer Cuprates

Evolution from a charge-ordered insulator to a high-temperature superconductor in Bi2Sr2(Ca,Dy)Cu2O8+δ

STRUCTURAL STUDIES ON THE SUPERCONDUCTING PHASE Bi4Sr4Ca2Cu4O2−δ