Abstract:High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi2Sr2Ca0.6Dy0.4Cu2O8+delta (Bi2212) sample surface to push its doping level continuously from deeply underdoped (Tc=25 K, doping level p-0.066) to the near zero doping parent Mott insulator, angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed electronic structure evolution in lightly hole-doped region for the first time. Our results indicate that the chemical potential lies at about 1 eV above the charge transfer band for the parent state at zero doping which is quite close to the upper Hubbard band. With increasing hole doping, the chemical potential moves continuously towards the charge transfer band and the band structure evolution exhibits a rigid band shift-like behavior. When the chemical potential approaches the charge transfer band at a doping level of -0.05, the nodal spectral weight near the Fermi level increases, followed by the emergence of the coherent quasiparticle peak and the insulator-superconductor transition. Our observations provide key insights in understanding the insulator-superconductor transition in doping the parent cuprate compound and for establishing related theories.

Shallow core levels, or how to determine the doping and $T_c$ of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ and Bi$_{2}$Sr$_2$CuO$_{6+δ}$ without cooling

Pseudogap Opening, Superconducting Fluctuation and Vortex-Like Excitation above Tc in Slightly Overdoped Bi2Sr2CaCu2O8+δ

Doping dependence of phase coherence between superconducting Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ grains

In situ carrier tuning in high temperature superconductor $$\hbox {Bi}_2\hbox {Sr}_2\hbox {CaCu}_2\hbox {O}_{8+\varvec{\delta} }$$ Bi 2 Sr 2 CaCu 2 O 8 + δ by potassium deposition

Doping Evolution of Nodal Band Renormalization in Bi 2 Sr 2 CuO 6+δ Superconductor Revealed by Laser-Based Angle-Resolved Photoemission Spectroscopy

Preparation Of Underdoped Bi2sr2ca2cu3o10+Delta Single Crystals

In situ carrier tuning in high temperature superconductor \(\hbox {Bi}_2\hbox {Sr}_2\hbox {CaCu}_2\hbox {O}_{8+{\delta} }\) by potassium deposition

In Situ Carrier Tuning in High Temperature Superconductor Bi_2Sr_2CaCu_2O_8+δ by Potassium Deposition

Coordination of the Energy and Temperature Scales of Pairing Across the Doping Phase Diagram of Bi_2Sr_2CaCu_2O_8+δ

Preparation of Underdoped Single Crystals

Doping Dependence of the Coupling of Electrons to Bosonic Modes in the Single-Layer High-TemperatureBi2Sr2CuO6Superconductor

Continuously Doping Bi2Sr2CaCu2O8+δ into Electron-Doped Superconductor by CaH2 Annealing Method

Constancy of the bilayer splitting as a function of doping in $Bi_{2}Sr_{2}CaCu_{2}O_{8+δ}$

Correlating Off-Stoichiometric Doping and Nanoscale Electronic Inhomogeneity in the High-TcSuperconductorBi2Sr2CaCu2

Spatially correlated incommensurate lattice modulations in an atomically thin high-temperature Bi_{2.1}Sr_{1.9}CaCu_{2.0}O_{8+δ} superconductors

Doping dependence of the superconducting gap in Tl_2Ba_2CuO_{6+delta} from heat transport

Mapping the Electronic Structure of Each Ingredient Oxide Layer of High-TcCuprate SuperconductorBi2Sr

Continuously Doping Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+<i>δ</i> </sub> into Electron-Doped Superconductor by CaH<sub>2</sub> Annealing Method

Visualization of Dopant Oxygen Atoms in a Bi2Sr2CaCu2O8+δ Superconductor

Revised phase diagram of the high-$T_c$ cuprate superconductor Pb-doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ revealed by anisotropic transport measurements

Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8 + Δ*