Power-Combining Transformer Techniques for Fully-Integrated CMOS Power Amplifiers
Kyu Hwan An,Ockgoo Lee,Hyungwook Kim,Dong Ho Lee,Jeonghu Han,Ki Seok Yang,Younsuk Kim,Jae Joon Chang,Wangmyong Woo,Chang-Ho Lee,Haksun Kim,Joy Laskar
DOI: https://doi.org/10.1109/jssc.2008.920349
2008-05-01
Abstract:Fully integrated CMOS power amplifiers (PAs) with parallel power-combining transformer are presented. for the high power CMOS PA design, two types of transformers, series-combining and parallel-combining, are fully analyzed and compared in detail to show the parasitic resistance and the turn ratio as the limiting factor of power combining. Based on the analysis, two kinds of parallel-combining transformers, a two-primary with a 1:2 turn ratio and a three-primary with a 1:2 turn ratio, are incorporated into the design of fully-integrated CMOS PAs in a standard 0.18-$\mu \hbox{m}$ CMOS process. the PA with a two-primary transformer delivers 31.2 dBm of output power with 41% of power-added efficiency (PAE), and the PA with a three-primary transformer achieves 32dBm of output power with 30% of PAE at 1.8GHz with a 3.3-V power supply.
engineering, electrical & electronic