A PAM-4 optical receiver based on a silicon photonic quantizer

Wenyi Xu,Jing Gao,Pengfei Ji,Yanan Sun,Weifeng He,Hui Wu

DOI: https://doi.org/10.1109/GROUP4.2017.8082224

2017-01-01

Abstract:We propose a new PAM-4 receiver architecture based on a silicon photonic quantizer that converts a PAM-4 optical signal into multiple weighted electrical signals. Circuit simulation of this receiver at 50-Gbps demonstrates its feasibility and advantages.

What problem does this paper attempt to address?

A novel optical receiver for PAM-4 transmission

Shenghao Liu,Ke Li,Dave J. Thomson,Yang Hong,Cosimo Lacava,Fanfan Meng,Weriwei Zhang,Periklis Petropoulos,Graham Reed,Xiaoke Ruan,Fan Yang,Lei Zhang,Fan Zhang

DOI: https://doi.org/10.1109/IPC47351.2020.9252330

2020-01-01

Abstract:Complex modulation format deployed within IMDD links pose the sensitivity and linearity challenges to the optical receiver design. Benefit from the proposed differential topology, this work cope with complex modulation format (e.g., PAM-4) up to 64Gb/s (OMA= -8.2dBm) under 1.0V power supply.
PAM4 Receiver Based on Quantum-Dot SOA Preamplifier for Short-Reach Applications

Guo-Wei Lu,Hong-Bo Zhang,Zhengkun Xing,Kouichi Akahane,Zhenzhou Cheng,Tiegen Liu,Takahide Sakamoto,Naokatsu Yamamoto

DOI: https://doi.org/10.1364/cleo_at.2020.jtu2e.18

2020-01-01

Abstract:PAM4 receiver based on QD-SOA preamplifier is experimentally demonstrated with a 2.8-dB sensitivity improvement and a 2.5-dB gain in IPDR when amplifying 20-Gb/s PAM4 signals in contrast to its counterpart with MQW-SOA preamplifier.
A 720-Mvpp 224-Gb/s PAM4 Optical Receiver with Multiple Peaking Techniques in 130-Nm SiGe BiCMOS

Zhang Qiu,Xiongshi Luo,Zhenghao Li,Dongfan Xu,Siqiang Zhu,Leiming Wang,Zhenjiang Mao,Xiaoyan Gui,Dan Li,Hongyu Yu,Quan Pan

DOI: https://doi.org/10.1109/apccas51387.2021.9687686

2021-01-01

Abstract:In this work, an optical receiver (RX) with multiple peaking techniques is presented. The RX consists of a trans-impedance amplifier (TIA), a continuous-time linear equalizer (CTLE), and a 2-stage single-to-differential converter (S2D). Adopting the proposed RC parallel structure, the TIA's bandwidth and transition speed get improved. Moreover, multiple peaking techniques, including RC emitter degeneration, shunt-inductive peaking and T-coil peaking, are implemented for bandwidth extension. With the asymmetrical T-coil, the S2D's output imbalances in amplitude and phase are limited to 0.2 dB and 1.6°. Designed in 130-nm SiGe BiCMOS, the system achieves a differential of $58\ \text{dB}\Omega$ and a bandwidth of 61 GHz. In general, the RX handles the 224-Gbit/s PAM4 input data with a $\text{THD} < 7\%$. The total power-efficiency is 0.43 pJ/bit.
A 4 X 56-Gbaud PAM-4 Optical Receiver Integrated with SiGe-BiCMOS TIA

Wei Chen,Minhao Li,Ming Zhong,Yuan Li,Ying Wu,Pisen Zhou,Tao Xia,Patrick Yin Chiang

DOI: https://doi.org/10.1109/lpt.2024.3482566

IF: 2.6

2024-01-01

IEEE Photonics Technology Letters

Abstract:A chip-on-board (COB) packaged four-channel optical receiver integrated with a transimpedance amplifier (TIA) in 0.13-μm SiGe-BiCMOS technology with f T /f MAX =260/350 GHz demonstrating 56-Gbaud four-level pulse-amplitude modulation (PAM-4) with low noise and high linearity is presented in support of optical receivers required in linear-drive pluggable optics (LPO) and beyond-400G optical links. The proposed four-stage optical receiver comprises an inductive shunt-feedback TIA followed by two variable gain amplifiers (VGAs) with a continuous-time linear equalizer (CTLE) function and a 50-ohm output buffer. The π-topology L-C network and inductive shunt feedback techniques are used in TIA to meet the specifications of wide bandwidth (BW) and low noise. Two current-splitting VGA stages with CTLE function cascaded after TIA featuring high reliability can compensate for the loss of BW which caused by photo diode (PD) parasitic capacitance and provide a gain control range of -12dB ~ +18dB that accommodates input current up to 2mApp with low group delay variation. The 50-ohm output buffer with a T-coil and degeneration resistor achieves better output matching and high linearity. Measurement results show that TIA provides a maximum DC transimpedance gain (ZT) of 74 dBΩ while O/E.BW is beyond 40 GHz, the 50-ohm output buffer offers 580-mV output swing and PAM-4 electrical eye diagrams up to 56-Gbaud of optical receiver with PRBS31Q. The optical receiver achieves a sensitivity of − 9.7-dBm optical modulation amplitude (OMA) at pre-FEC BER limit of 2.4 × 10 -4 operating 56-Gbaud PAM-4 SSPRQ and consumes 720mW with a power supply of 3.3 V.
A 112-Gb/s PAM-4 Receiver with Ultra-Fine GainAdjustment CTLE and Novel Sample-and-Reset Slicer in 28-Nm CMOS

Renjie Tang,Ka’Nan Wang,Huanfa Sun,Chenyao Cao,Shangjie Wei,Yu Su,Yukun He,Xi’An Chen,Haidong Yang,Shengzhang Lin,Yang Xiao,Min Li,Lei Wang,Xiaoyan Gui

DOI: https://doi.org/10.1109/esserc62670.2024.10719519

2024-01-01

Abstract:A 112-Gb/s mixed-signal 4-level pulse amplitude modulation (PAM-4) receiver (RX) with clock-data recovery (CDR) for extra-short-reach (XSR) applications is presented. An ultra-fine gain-adjustment continuous-time linear equalizer (CTLE) is introduced to deal with the channel loss as well as the long-term inter-symbol interference (ISI). A novel quarter-rate multi-stage slicer with eight-phase clocking and rapid reset in the phase detectors (PDs) is proposed, which is capable of resolving 112-Gb/s PAM-4 signal in $28-\mathrm{nm}$ CMOS. A Bang-Bang CDR with programmable bandwidth followed by a 7-bit phase interpolator recovers the $14-\mathrm{GHz} 1 / 4$-rate clock. The PAM-4 receiver fabricated in $28-\mathrm{nm}$ CMOS achieves bit-error-rate (BER) better than 1E-12 with PRBS-7 measured over a channel with 12dB loss at Nyquist frequency. Attributed to first-time implementation of $1 / 4$-rate 112-Gb/s PAM-4 receiver in $28-\mathrm{nm}$ CMOS, this work achieves the best energy efficiency of 0.97 $\mathrm{pJ} /$ bit among other PAM-4 receivers at similar process nodes.
Design of 80-Gb/s PAM4 Wireline Receiver in 65-Nm CMOS Technology

Fangxu Lv,Xuqiang Zheng,Ziqiang Wang,Yajun He,Chun Zhang,Jianye Wang,Zhihua Wang,Hanjun Jiang

DOI: https://doi.org/10.1109/edssc.2017.8126514

2017-01-01

Abstract:An 80 Gb/s 4-level pulse amplitude modulation (PAM4) wireline receiver is presented in this paper. This receiver adopts quarter rate architecture to improve data rate and reduce power consumption. In order to reduce the complexity of the clock and data recovery (CDR) design, a voltage control oscillator (VCO) based CDR without reference clock is used. Furthermore, four BBPDs are used to sample the edge and data information generated by the middle slicer for extraction the phase error between the data and clock. The receiver is designed in 65nm CMOS technology and supplied with 1.2V. The simulation results show that the proposed PAM4 receiver can work at 80 Gb/s with 235mW consumption.
Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

Z. Xuan,J. Sharma,Chun-Ming Hsu,P. Liao,Ranjeet Kumar,M. Sakib,Hao Li,H. Rong,J. Jaussi,G. Balamurugan

2021-06-13

Abstract:We present a 4λ×112 Gb/s/λ hybrid-integrated silicon photonic TX suitable for 400G Ethernet modules and co-packaged optics. The photonic IC (PIC) uses cascaded micro-ring modulators (MRMs) with integrated heaters for efficient wavelength division multiplexing (WDM). The 28nm CMOS electronic IC includes PAM4 MRM drivers with nonlinear FFE and control circuits to stabilize MRM performance against process and temperature variations. A thermal control scheme based on sensing MRM photocurrents is used to minimize monitoring hardware in the PIC. Measured results demonstrate 112 Gb/s PAM4 operation with <0.7 dB TDECQ from each of the 4 channels. To our best knowledge, this is the highest per-λ data rate reported for an O-band ring-based WDM transmitter.

Physics,Engineering
A 1.41-Pj/b 56-Gb/s PAM-4 Receiver Using Enhanced Transition Utilization CDR and Genetic Adaptation Algorithms in 7-Nm CMOS

Behzad Dehlaghi,Shayan Shahramian,Joshua Liang,Ryan Bespalko,Dustin Dunwell,James Bailey,Bo Wang,Alireza Sharif-Bakhtiar,Michael O'Farrell,Kerry Tang,Anthony Chan Carusone,David Cassan,Davide Tonietto

DOI: https://doi.org/10.1109/lssc.2019.2938677

2019-01-01

IEEE Solid-State Circuits Letters

Abstract:This letter presents a 56.25-Gb/s analog-mixed signal pulse amplitude modulation (PAM)-4 receiver in 7-nm fin field effect transistor (FinFET) CMOS. The receiver uses an analog front-end (AFE) with extensive programmability and can equalize channels with up to 22.3-dB loss at 14 GHz. AFE settings are optimized using a genetic adaptation algorithm to find the global minima for the bit-error-rate (BER). A PAM4 clock recovery scheme is proposed that reduces the number of required edge samplers for a PAM-4 bang-bang phase detector without degrading the jitter tolerance of the receiver. Using an AFE as opposed to a decision-feedback equalizer (DFE) along with the proposed clock recovery scheme results in low energy consumption of 1.41 pJ/bit.
112 Gb/s PAM-4 Silicon Photonics Receiver Integrated With SiGe-BiCMOS Linear TIA

Daisuke Okamoto,Yasuyuki Suzuki,Koichi Takemura,Junichi Fujikata,Takahiro Nakamura

DOI: https://doi.org/10.1109/lpt.2022.3144985

IF: 2.6

2022-02-01

IEEE Photonics Technology Letters

Abstract:We have developed a silicon photonics receiver integrated with a SiGe-BiCMOS linear transimpedance amplifier (TIA) using the flip-chip bonding technology to assist in resolving the I/O bottleneck problem in inter-chip data communication. The proposed device demonstrated optical 112 Gb/s four-level pulse amplitude modulation (PAM-4) operations and clear eye openings without any equalization for the pseudorandom binary sequence $2^{mathbf {15}}$ – 1 signal. The 3 dB bandwidth and transimpedance gain were designed to be 37.1 GHz and 60.1 dB $oldsymbol {Omega } $ , respectively, at a supply voltage of 3.3 V. The consumption current of the linear TIA was 95.1 mA, and it resulted in a power consumption of 314 mW (2.8 pJ/bit). A linear TIA circuit is a key technology for PAM-4 operation; therefore, we discussed the linearity of our receiver response through eye diagrams and simulation. The measured eye diagrams agreed with the simulation results, and the proposed device maintained a linear response for up to 450 $oldsymbol {mu } ext{A}_{mathbf {p-p}}$ input current. In addition, its operation rate of 112 Gb/s is the highest operation rate reported for a silicon photonics PAM-4 receiver based on flip-chip 3D integration with a germanium photodetector and a SiGe-BiCMOS linear TIA.

engineering, electrical & electronic,optics,physics, applied
A 50-Gb/s PAM-4 Silicon-Photonic Transmitter Incorporating Lumped-Segment MZM, Distributed CMOS Driver, and Integrated CDR

Qiwen Liao,Yuguang Zhang,Siyuan Ma,Lei Wang,Leliang Li,Guike Li,Zhao Zhang,Jian Liu,Nanjian Wu,Liyuan Liu,Yong Chen,Xi Xiao,Nan Qi

DOI: https://doi.org/10.1109/jssc.2021.3134874

2022-03-01

Abstract:This article presents a 50-Gb/s optical transmitter (TX), consisting of a 40-nm distributed CMOS driver and a 180-nm silicon-photonic modulator. A lumped-segment Mach–Zehnder modulator (LS-MZM) is developed for high bandwidth (BW) four-level pulse amplitude (PAM-4) modulation. A multi-segment driver with limiting outputs is co-designed, which is distributed into each LS-MZM segment. By grouping these LS-MSM segments in a thermometer code, high-linearity modulation is realized without the need of power-hungry high-swing linear drivers. To improve the optical PAM-4 signal integrity, in-segment multiplexing along with clock phase interpolation is adopted to synchronize the electrical and optical signals across all segments. The hybrid coupling between the driver and modulator is devised to boost the BW of the high-speed data path, while a half-rate clock and data recovery (CDR) circuit is integrated to remove the accumulated jitter. Measurements show that the TX exhibits an extinction ratio (ER) of up to 9.8 dB and a 0.99 ratio of the level mismatch. A figure-of-merit (FoM) of 1.39 pJ/bit/dB corresponds to a 682-mW power, which can be further reduced by 40%, at the cost of a degraded ER of 4 dB. The PAM-4 CDR helps to achieve $< 10^{-12}$ BER and >0.1-$\text{U}I_{\mathrm {pp}}$ jitter tolerance (JTOL) from 10 to 100 MHz.

engineering, electrical & electronic
A 4×112 Gb/s PAM-4 Silicon-Photonic Transmitter and Receiver Chipsets for Linear-Drive Co-Packaged Optics

Han Liu,Zhihan Zhang,Ye Liu,Daigao Chen,Donglai Lu,Jian He,Guike Li,Min Liu,Ziyue Dang,Xi Xiao,Nan Qi

DOI: https://doi.org/10.1109/jssc.2024.3435378

IF: 5.4

2024-09-28

IEEE Journal of Solid-State Circuits

Abstract:A Gb/s hybrid-integrated silicon photonic (SiPh) transmitter and receiver chipsets are presented for the linear-drive co-packaged optics (CPO). A quad-channel open-collector (OC) driver is co-designed with the arrayed traveling-wave (TW) Mach-Zehnder modulator (MZM) for high bandwidth (BW) and high efficiency. A second-order hybrid passive-active continuous-time linear equalizer (CTLE) is proposed to compensate for the nonlinear channel loss up to 12 dB. A linear trans-impedance amplifier (TIA) is proposed with a T- input network and cascaded embedded CTLE, which boosts the BW while maintaining a flat in-band frequency response. Implemented in 180-nm SiGe BiCMOS, the driver and TIA are measured with over 35-GHz BW. The complete SiPh TRX is built by co-packaging both the driver with MZM and TIA with photodetector (PD). Experimental results show 112-Gb/s PAM-4 eyes of both the E-to-O modulation and O-to-E reception. The OTX achieves a 5-dB optical extinction ratio (ER) and 4.8-pJ/bit power efficiency, while the ORX achieves 67-dB trans-impedance and 2.95-pJ/bit power efficiency. To emulate CPO application, a compact-size evaluation board (EVB) is made, and four-channel tests are completed.

engineering, electrical & electronic
PAM-4 Optical Transmission Beyond 224 Gbps Based on an Ultrahigh-Bandwidth Slow-Light Silicon Modulator

Changhao Han,Jun Qin,Qipeng Yang,Zhao Zheng,Haowen Shu,Yunhao Zhang,Yichen Wu,Yu Sun,Junde Lu,Yan Zhou,Zhangfeng Ge,Lei Wang,Zhixue He,Shaohua Yu,Weiwei Hu,Chao Peng,John E. Bowers,Xingjun Wang

DOI: https://doi.org/10.1364/cleo_at.2024.am4j.3

2024-01-01

Abstract:We experimentally demonstrate PAM-4 optical transmission beyond 224 Gbps based on an ultrahigh-bandwidth slow-light silicon modulator in C-band with the combination of the artificial neural network equalizers.
Optical PAM-4 Signal Generation Using a Silicon Mach-Zehnder Optical Modulator

Sizhu Shao,Jianfeng Ding,Lingchen Zheng,Kaiheng Zou,Lei Zhang,Fan Zhang,Lin Yang

DOI: https://doi.org/10.1364/oe.25.023003

IF: 3.8

2017-01-01

Optics Express

Abstract:In this paper we demonstrate the 4 level pulse amplitude modulation (PAM-4) signal generation through a silicon Mach-Zehnder modulator. The baud speed of the PAM-4 signal generation is characterized up to 32 Gbaud (64Gb/s). And we have measured the device's bit error rate (BER) up to 32 Gbaud and the spurious free dynamic range (SFDR) of the distortion component of the modulated light.
A 25gb/s 185mw PAM-4 Receiver with 4-Tap Adaptive DFE and Sampling Clock Optimization in 55nm CMOS

Liangxiao Tang,Weixin Gai,Chih-Kong Ken Yang,Bingyi Ye,Congcong Chen

DOI: https://doi.org/10.1109/iscas51556.2021.9401299

2021-01-01

Abstract:A 25Gb/s PAM-4 receiver is presented with 4- tap adaptive DFE and sampling clock optimization. PAM-4 signaling suffers more from non-optimal sampling clock phase which degrades BER. By finding the point with the least pre-cursor ISI, the sampling clock can be recovered with optimal phase, which improves the BER by as much as 109 through 12.5dB channel loss. A novel clocked amplifier is implemented as a slicer to reduce the loop delay and meet the timing constraints of the direct feedback. Fabricated in 55nm CMOS technology, the receiver occupies 0.27mm2 and consumes 185mW at 25Gb/s with a power supply of 1.2V.
Four-Dimensional Silicon Photonic Dual-Polarization Direct Detection Receiver

Jingchi Li,Zhen Wang,Xingfeng Li,Haoshuo Chen,William Shieh,Yikai Su

DOI: https://doi.org/10.1109/jlt.2024.3377808

IF: 4.7

2024-01-01

Journal of Lightwave Technology

Abstract:The advancement of next-generation fiber-optic transmission requires higher-speed transceivers where cost, footprint and power consumption are of critical consideration. Photonic integration provides an effective solution to reduce the cost and footprint of the transceivers by integrating diverse optoelectronic devices on chips. In particular, complementary metal–oxide–semiconductor (CMOS)-compatible silicon photonics (SiP) has been considered as a promising platform with high integration density and high yield. Since a coherent receiver relies on a local laser based on heterogeneous III-V materials, it is highly desired to eliminate the laser by developing integrated SiP DD receivers. In this paper, by leveraging the polarization diversity technique, we demonstrate the first four-dimensional (I, Q, X, Y) integrated dual-polarization (DP) direct detection (DD) receiver with an automated silicon polarization controller followed by two SiP single-polarization carrier-assisted differential detection (CADD) receivers. A 528-Gb/s polarization-division multiplexing 16-QAM OFDM signal was transmitted over an 80-km single-mode fiber (SMF) link and detected using the integrated SiP DP-CADD receiver, with a bit error ratio below the 24% soft-decision forward error correction threshold. To the best of our knowledge, we achieved a record 426-Gb/s net capacity and 11.83-b/s/Hz net ESE for an integrated DD receiver.

engineering, electrical & electronic,optics,telecommunications
Silicon Photonic Mach–Zehnder Modulator Architectures for on Chip PAM-4 Signal Generation

Alireza Samani,Eslam El-Fiky,Mohamed Morsy-Osman,Rui Li,David Patel,Thang Hoang,Maxime Jacques,Mathieu Chagnon,Nicols Abada,David V. Plant,Nicolas Abadia

DOI: https://doi.org/10.1109/jlt.2019.2908655

IF: 4.7

2019-07-01

Journal of Lightwave Technology

Abstract:Alireza Samani, Eslam El-Fiky, Mohamed Morsy-Osman, Rui Li, David Patel, Thang Hoang, Maxime Jacques, Mathieu Chagnon, Nicolás Abadía, David V. Plant<br/>Four level pulse amplitude modulation (PAM-4) has become the modulation format of choice to replace on–off keying (OOK) for the 400 Gb/s short reach optical communications systems. In this paper, we investigate the possible modifications to conventional Mach–Zehnder modulator ... [J. Lightwave Technol. 37, 2989-2999 (2019)]

engineering, electrical & electronic,optics,telecommunications
A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Chi Xiong,Douglas M. Gill,Jonathan E. Proesel,Jason S. Orcutt,Wilfried Haensch,William M. J. Green

DOI: https://doi.org/10.1364/OPTICA.3.001060

2016-08-27

Abstract:Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a unique advantage because it does not require extra lasers or a costly overhaul of optical fiber cablings within the existing infrastructure. Here, we demonstrate the first fully monolithically integrated silicon photonic four-level PAM (PAM-4) transmitter operating at 56 Gb/s and demonstrate error-free transmission (bit-error-rate < 10$^{-12}$) up to 50 Gb/s without forward error correction. The superior PAM-4 waveform is enabled by optimization of silicon traveling wave modulators and monolithic integration of the CMOS driver circuits. Our results show that monolithic silicon photonics technology is a promising platform for future ultrahigh data rate optical interconnects.

Optics
Integrated All-Optical Wavelength Multicasting for 40 Gbit/S Pdm-Qpsk Signals Using A Single Silicon Waveguide

Xianglian Feng,Zhihang Wu,Xiaoyan Wang,Shiming Gao

DOI: https://doi.org/10.1016/j.optlastec.2017.03.039

2017-01-01

Abstract:All-optical wavelength multicasting is presented and experimentally demonstrated for 40 Gbit/s polarization-division-multiplexed (PDM) nonreturn-to-zero quadrature phase-shift keying (QPSK) signals using four-wave mixing (FWM) with angled-polarization pumps in a silicon waveguide. Five multicast channels are obtained on the generated idlers. The eye diagrams, constellation diagrams, and bit error rates (BERs) of the QPSK sequences on the two polarization states are measured for each wavelength channel. The power penalties of all these multicast QPSK sequences on x or y polarization state are less than 2.0 dB at the BER of 3 x 10(-3). (C) 2017 Elsevier Ltd. All rights reserved.
Optical Single Side-Band Nyquist PAM-4 Transmission Using Dual-Drive MZM Modulation and Direct Detection

Mingyue Zhu,Jing Zhang,Xingwen Yi,Hao Ying,Xiang Li,Ming Luo,Yingxiong Song,Xiatao Huang,Kun Qiu

DOI: https://doi.org/10.1364/oe.26.006629

IF: 3.8

2018-01-01

Optics Express

Abstract:We present the design and optimization of the optical single side-band (SSB) Nyquist four-level pulse amplitude modulation (PAM-4) transmission using dual-drive Mach-Zehnder modulator (DDMZM)modulation and direct detection (DD), aiming at the C-band cost-effective, high-speed and long-distance transmission. At the transmitter, the laser line width should be small to avoid the phase noise to amplitude noise conversion and equalization-enhanced phase noise due to the large chromatic dispersion (CD). The optical SSB signal is generated after optimizing the optical modulation index (OMI) and hence the minimum phase condition which is required by the Kramers-Kronig (KK) receiver can also be satisfied. At the receiver, a simple AC-coupled photodiode (PD) is used and a virtual carrier is added for the KK operation to alleviate the signal-to-signal beating interference (SSBI).A Volterra filter (VF) is cascaded for remaining nonlinearities mitigation. When the fiber nonlinearity becomes significant, we elect to use an optical band-pass filter with offset filtering. It can suppress the simulated Brillouin scattering and the conjugated distortion by filtering out the imaging frequency components. With our design and optimization, we achieve single-channel, single polarization 102.4-Gb/s Nyquist PAM-4 over 800-km standard single-mode fiber (SSMF).
Optical Interferometric Synthesis of PAM4 Signals Based on Dual-Drive Mach–Zehnder Modulation

Jianfeng Xu,Jiangbing Du,Rongrong Ren,Zhengshang Ruan,Zuyuan He

DOI: https://doi.org/10.1016/j.optcom.2017.05.019

IF: 2.4

2017-01-01

Optics Communications

Abstract:In this work, optical interferometric synthesis and demodulation of four-level pulse amplitude modulation (PAM4) signals by using commercial dual-drive Mach–Zehnder Modulator (DD-MZM) is proposed and studied. Simulations are carried out and signal quality is evaluated in terms of eye jitter, linearity and so on for the PAM4 signals generated by the proposed DD-MZM with improved performance unfolded. Experimental generation of the optically synthesized PAM4 signals up to 50 Gbaud (100 Gbps) is achieved. The transmission of the PAM4 signals over 5-Km standard single mode fiber (SSMF) is carried out with error-free below the FEC limit (3.8E-3) without digital equalization at 90 Gbps. The linear-amplifier-free configuration by DD-MZM leads to simplified implementation and improved performance for high speed PAM4 signal generation, which would be of great significance for short reach optical interconnection.

A PAM-4 optical receiver based on a silicon photonic quantizer

A novel optical receiver for PAM-4 transmission

PAM4 Receiver Based on Quantum-Dot SOA Preamplifier for Short-Reach Applications

A 720-Mvpp 224-Gb/s PAM4 Optical Receiver with Multiple Peaking Techniques in 130-Nm SiGe BiCMOS

A 4 X 56-Gbaud PAM-4 Optical Receiver Integrated with SiGe-BiCMOS TIA

A 112-Gb/s PAM-4 Receiver with Ultra-Fine GainAdjustment CTLE and Novel Sample-and-Reset Slicer in 28-Nm CMOS

Design of 80-Gb/s PAM4 Wireline Receiver in 65-Nm CMOS Technology

Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

A 1.41-Pj/b 56-Gb/s PAM-4 Receiver Using Enhanced Transition Utilization CDR and Genetic Adaptation Algorithms in 7-Nm CMOS

112 Gb/s PAM-4 Silicon Photonics Receiver Integrated With SiGe-BiCMOS Linear TIA

A 50-Gb/s PAM-4 Silicon-Photonic Transmitter Incorporating Lumped-Segment MZM, Distributed CMOS Driver, and Integrated CDR

A 4×112 Gb/s PAM-4 Silicon-Photonic Transmitter and Receiver Chipsets for Linear-Drive Co-Packaged Optics

PAM-4 Optical Transmission Beyond 224 Gbps Based on an Ultrahigh-Bandwidth Slow-Light Silicon Modulator

Optical PAM-4 Signal Generation Using a Silicon Mach-Zehnder Optical Modulator

A 25gb/s 185mw PAM-4 Receiver with 4-Tap Adaptive DFE and Sampling Clock Optimization in 55nm CMOS

Four-Dimensional Silicon Photonic Dual-Polarization Direct Detection Receiver

Silicon Photonic Mach–Zehnder Modulator Architectures for on Chip PAM-4 Signal Generation

A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Integrated All-Optical Wavelength Multicasting for 40 Gbit/S Pdm-Qpsk Signals Using A Single Silicon Waveguide

Optical Single Side-Band Nyquist PAM-4 Transmission Using Dual-Drive MZM Modulation and Direct Detection

Optical Interferometric Synthesis of PAM4 Signals Based on Dual-Drive Mach–Zehnder Modulation