FORMULAE FOR MAXIMUM ESCAPE DEPTH OF REDIFFUSED ELECTRONS AND BACKSCATTERING COEFFICIENT OF METAL FILMS

Ai-Gen Xie,Hao-Yu Liu,Y. Yu,Yu-Qing Xia,T. Y. Wan
DOI: https://doi.org/10.1142/S0218625X18500476
2018-01-01
Surface Review and Letters
Abstract:Based on the experimental maximum escape depth S(W-p0, Z) of rediffused electrons from atomic number Z metal at incident energy of primary electron W-p0, the relationship among S(W-p0, Zthorn, W-p0 and Z in the energy range of 9.3 keV <= W-p0 <= 40 keV was obtained and proved to be true by experimental data. According to the experimental results of rediffused electrons, the characteristics of secondary electron emission, relationships among parameters of rediffused electrons and the main processes of rediffused electrons emission, the formula for W-p0 backscattering coeffcient eta(W-p0, Z,t) of Z metal films with film thickness t as a function of t, Z and was deduced, and the results were analyzed. It is concluded that the deduced formula for eta(W-p0, Z, t) can be used to calculate eta(W-p0, Z, t) in the energy range of 9.3 keV <= W-p0 <= 40 keV. The secondary electron yield delta from thin films are applied in more and more fields such as electronic information technology, accelerator and space flight, and eta(W-p0, Z, t) is an important parameter of delta from Z metal films. So deducing the formula for eta(W-p0, Z, t) in this study is necessary.
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