Efficient UV Photodetector Based on Heterojunction of N -Zno Nanorods/ P -Diamond Film

Yongbiao Wan,Shiyong Gao,Lin Li,Jiejing Zhang,Huaiyun Fan,Shujie Jiao,Jinzhong Wang,Qingjiang Yu,Dongbo Wang
DOI: https://doi.org/10.1007/s10854-017-6904-8
2017-01-01
Journal of Materials Science Materials in Electronics
Abstract:ZnO nanorods (NRs) have been successfully fabricated on p-type boron-doped diamond (BDD) substrate by hydrothermal method. The current–voltage characteristics of the ZnO NRs/BDD heterojunction show a typical rectifying behavior with extremely low reverse leakage current and high rectification ratio of around 370 at bias of 3 V. Exposed to ultraviolet (UV) illumination with a wavelength of 365 nm, the time dependent photoresponse manifests high sensitivity and consistent transients with a rise time of 4.9 s and decay time of 6.4 s. Circulating on/off measurement under UV detection demonstrates the excellent stability and repeatability for as-fabricated ZnO NRs/BDD heterojunction. Furthermore, the mechanism for UV detection on the ZnO NRs/BDD heterojunction has also been discussed.
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