Quantum Spin Hall Phase in Mo2M2C3O2(M = Ti, Zr, Hf) MXenes

Chen Si,Jinxuan You,Wujun Shi,Jian Zhou,Zhimei Sun

DOI: https://doi.org/10.1039/c6tc04560j

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:A new family of quantum spin Hall materials characterized by topologically protected helical edge states are predicted in Mo2MC2O3(M = Ti, Zr, Hf) MXenes.

What problem does this paper attempt to address?

Prediction of the Quantum Spin Hall Effect in Monolayers of Transition-Metal Carbides Mc (M. =. Ti, Zr, Hf)

Liujiang Zhou,Bin Shao,Wujun Shi,Yan Sun,Claudia Felser,Binghai Yan,Thomas Frauenheim

DOI: https://doi.org/10.1088/2053-1583/3/3/035022

IF: 6.861

2016-01-01

2D Materials

Abstract:We report the existence of the quantum spin Hall effect (QSHE) in monolayers of transition-metal carbides MC(M. =. Zr, Hf). Under ambient conditions, the ZrC monolayer exhibits QSHE with an energy gap of 54 meV, in which topological helical edge states exist. Enhanced d(xy)-d(xy) interaction induces band inversion, resulting in nontrivial topological features. By applying in-plane strain, the HfC monolayer can be tuned from a trivial insulator to a quantum spin Hall insulator with an energy gap of 170 meV, three times that of the ZrC monolayer. The strong stability of MC monolayers provides a new platform for QSHE and spintronic applications.
Quantum Spin Hall Effect in Two-Dimensional Transition-Metal Chalcogenides MX5 (M = Zr, Hf and X = S, Se, Te)

Xing Wang,Wenhui Wan,Yanfeng Ge,Kaicheng Zhang,Yong Liu

DOI: https://doi.org/10.1016/j.physe.2022.115325

2022-01-01

Abstract:Based on first-principles calculations, we have found a family of two-dimensional (2D) transition-metal (TM) chalcogenides MX5 (M = Zr, Hf and X = S, Se, Te) can host quantum spin Hall (QSH) effect. The molecular dynamics (MD) simulations indicate that they are all thermal-dynamically stable at room and high temperature. We have investigated MX5's electronic properties and found their properties are very similar. The single-layer MX5 are all gapless semimetals without consideration of spin-orbit coupling (SOC). With consideration of SOC, they are all insulators with maximum band gap of 0.187 eV. The evolution of Wannier charge centers (WCC) and edge states confirm they are all QSH insulators. The mechanisms for QSH effect in MX5 originate from the special nonsymmorphic space group features. In addition, the QSH state of MX5 survives at a large range of strain as long as the interchain coupling is not strong enough to reverse the band ordering. Monolayer MX5 expand the TI materials based on TM chalcogenides and may open up a new way to fabricate novel low power spintronic devices.
Prediction of T- and H-Phase Two-Dimensional Transition-Metal Carbides/Nitrides and Their Semiconducting-Metallic Phase Transition.

Chi Chen,Xiao Ji,Kui Xu,Bao Zhang,Ling Miao,Jianjun Jiang

DOI: https://doi.org/10.1002/cphc.201700111

IF: 3.52

2017-01-01

ChemPhysChem

Abstract:The discovery of various two-dimensional (2D) nanomaterials with different phases is fundamentally and technologically intriguing, leading to diverse physical and chemical properties for expanded applications. Herein, we performed systematic first-principles calculations to explore a series of single-layer MXenes (M2 X: M=Sc, Ti, V, Cr, Mn, Zr, Nb, Mo, Hf, Ta; X=C, N). The new H-phase MXenes are firstly predicted, which are compared with the usually synthesized MXenes named as T-phase MXenes on their structure and electronic properties. Semiconducting-metallic transitions could be realized by T-/H- phase transition for Sc2 CO2 , Sc2 CO2 H2 , and Ti2 CO2 . Besides, the differences between MXenes and MoS2 on energy storage are discussed. Our work will provide valuable directions for the discovery of new MXene phases and give a systematic understanding of 2D MXenes.
Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Yandong Ma,Liangzhi Kou,Ying Dai,Thomas Heine

DOI: https://doi.org/10.1103/PhysRevB.92.085427

2015-04-01

Abstract:Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of first-principles calculations, we predict a family of robust 2D TIs in monolayer square transition metal dichalcogenides (MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2). Sizeable intrinsic nontrivial bulk band gaps ranging from 24 to 187 meV are obtained, guarantying the quantum spin Hall (QSH) effect observable at room temperature in these new 2D TIs. Significantly different from most known 2D TIs with comparable band gaps, these sizeable energy gaps originate from the strong spin-orbit interaction related to the pure d electrons of the Mo/W atoms around the Fermi level. A single pair of topologically protected helical edge states is established for the edge of these systems with the Dirac point locating in the middle of the bulk band gap, and their topologically nontrivial states are also confirmed with nontrivial topological invariant Z2 = 1. More interestingly, by controlling the applied strain, a topological quantum phase transition between a QSH phase and a metallic phase or a trivial insulating phase can be realized in these 2D materials, and the detailed topological phase diagram is established.

Materials Science
Topological insulators in ordered double transition metals M$'_2$M$"$C$_2$ (M$'$= Mo, W; M$"$= Ti, Zr, Hf) MXenes

Mohammad Khazaei,Ahmad Ranjbar,Masao Arai,Seiji Yunoki

DOI: https://doi.org/10.1103/PhysRevB.94.125152

2016-10-01

Abstract:The family of two-dimensional transition metal carbides, so called MXenes, has recently found new members with ordered double transition metals M$'_2$M$"$C$_2$, where M$'$ and M$"$ stand for transition metals. Here, using a set of first-principles calculations, we demonstrate that some of the newly added members, oxide M$'_2$M$"$C$_2$ (M$'$= Mo, W; M$"$= Ti, Zr, Hf) MXenes, are topological insulators. The nontrivial topological states of the predicted MXenes are revealed by the $Z_2$ index, which is evaluated from the parities of the occupied bands below the Fermi energy at time reversal invariant momenta, and also by the presence of the edge states. The predicted M$'_2$M$"$C$_2$O$_2$ MXenes show nontrivial gaps in the range of 0.041 -- 0.285 eV within the generalized gradient approximation and 0.119 -- 0.409 eV within the hybrid functional. The band gaps are induced by the spin-orbit coupling within the degenerate states with $d_{x^2-y^2}$ and $d_{xy}$ characters of M$'$ and M$"$, while the band inversion occurs at the $\Gamma$ point among the degenerate $d_{x^2-y^2}$/$d_{xy}$ orbitals and a non-degenerate $d_{3z^2-r^2}$ orbital, which is driven by the hybridization of the neighboring orbitals. The phonon dispersion calculations find that the predicted topological insulators are structurally stable. The predicted W-based MXenes with large band gaps might be suitable candidates for many topological applications at room temperature. In addition, we study the electronic structures of thicker ordered double transition metals M$'_2$M$"_2$C$_3$O$_2$ (M$'$= Mo, W; M$"$= Ti, Zr, Hf) and find that they are nontrivial topological semimetals.

Materials Science
Quantum spin Hall insulating phase in two-dimensional MA2Z4 materials: SrTl2Te4 and BaTl2Te4

Joel D'Souza,Ina Marie R. Verzola,Sreeparvathy P. C,Rovi Angelo B. Villaos,Zhi-Quan Huang,Feng-Chuan Chuang

DOI: https://doi.org/10.1063/5.0207576

IF: 4

2024-06-03

Applied Physics Letters

Abstract:With the recent synthesis of two-dimensional (2D) MoSi2N4, the 2D material family with the general formula MA2Z4 has become increasingly popular. However, their topological properties have yet to be explored. Using first-principles calculations, we examine the electronic and topological properties of monolayer MA2Z4 (M = Ca, Sr, or Ba; A = In or Tl; Z = S, Se, or Te) compounds. Our study reveals the quantum spin Hall phase in SrTl2Te4 and BaTl2Te4 with a nontrivial topological bandgap of 97 and 28 meV, respectively, under a hybrid functional approach with the inclusion of spin–orbit coupling. Remarkably, the Z2 topological invariant and the presence of gapless edge states further confirmed their nontrivial topological phase. In addition, we demonstrate the quantized spin Hall conductivity in SrTl2Te4, which stems from the non-zero Berry curvature. The topological phase transition is driven by SOC due to the band inversion between the Te-px+py and Tl-s orbitals around Γ. Interestingly, the nontrivial topological properties are robust against strain and preserved under an applied electric field. Finally, our research identifies that the emergent MA2Z4 monolayers have interesting topological properties and have great potential for experimental realization of future topological applications.

physics, applied
Double Quantum Spin Hall Phase in Moiré WSe 2

Kaifei Kang,Yichen Qiu,Kenji Watanabe,Takashi Taniguchi,Jie Shan,Kin Fai Mak

DOI: https://doi.org/10.1021/acs.nanolett.4c05308

IF: 10.8

2024-11-08

Nano Letters

Abstract:Quantum spin Hall (QSH) insulators are topologically protected phases of matter in two dimensions that can support a pair of helical edge states surrounding an insulating bulk. A higher (even) number of helical edge state pairs is usually not possible in real materials because spin mixing would gap out the edge states. Here, we report experimental evidence for a QSH phase with one and two pairs of helical edge states in twisted bilayer WSe(2) at Moiré hole filling factor ν = 2 and 4,...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Two-Dimensional Ferroelastic Topological Insulators in Single-Layer Janus Transition Metal Dichalcogenides MSSe (M=Mo, W)

Yandong Ma,Liangzhi Kou,Baibiao Huang,Ying Dai,Thomas Heine

DOI: https://doi.org/10.48550/arXiv.1806.02463

2018-06-07

Materials Science

Abstract:Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using first-principles calculations, we demonstrate Janus single-layer MSSe (M=Mo, W) stable two-dimensional crystals that show the long-sought ferroelastic topological insulator properties. The material features low switching barriers and strong ferroelastic signals, beneficial for applications in nonvolatile memory devices. Moreover, their topological phases harbor sizeable nontrivial band gaps, which supports the quantum spin Hall effect. The unique coexistence of excellent ferroelastic and quantum spin Hall phases in single-layer MSSe provides extraordinary platforms for realizing multi-purpose and controllable devices.
Computational design of double transition metal MXenes with intrinsic magnetic properties

Yinggan Zhang,Zhou Cui,Baisheng Sa,Naihua Miao,Jian Zhou,Zhimei Sun

DOI: https://doi.org/10.1039/d1nh00621e

2022-02-28

Abstract:Two-dimensional transition metal carbides (MXenes) have great potential to achieve intrinsic magnetism due to their available chemical and structural diversity. In this work, by spin-polarized density functional theory calculations, we designed and comprehensively investigated 50 double transition metal (DTM) MXenes MCr2CTx (T = H, O, F, OH, or bare) based on the chemical formula of M2C (M = Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Mo, W). We highlight that ferromagnetic half-metallicity, antiferromagnetic semiconduction, as well as antiferromagnetic half-metallicity have been achieved in the DTM MXenes. Herein, ferromagnetic half-metallic ScCr2C2, ScCr2C2H2, ScCr2C2F2, and YCr2C2H2 are characterized with wide band gaps and high Curie temperatures. Very interestingly, the ScCr2C2-based magnetic tunnel junction presents a tunnel magnetoresistance ratio as high as 176 000%. In addition, the antiferromagnetic semiconducting TiCr2C2, ZrCr2C2, and ZrCr2C2(OH)2, possessing moderate band gaps and high Néel temperatures, have been predicted. Especially, the Néel temperature of ZrCr2C2(OH)2 can reach 425 K. Moreover, the Dirac cone-like band structure feature is highlighted in antiferromagnetic half-metallic ZrCr2C2H2. Our study provides a new potential strategy for designing MXenes in spintronics.
Hinged Quantum Spin Hall Effect in Antiferromagnetic Topological Insulators

Yue-Ran Ding,Dong-Hui Xu,Chui-Zhen Chen,X. C. Xie

DOI: https://doi.org/10.1103/physrevb.101.041404

2020-01-01

Abstract:In this work, we predict a hinged quantum spin-Hall (HQSH) effect featured by a pair of helical hinge modes in antiferromagnetic (AFM) topological insulator (TI) multilayers. This pair of helical hinge modes are localized on the hinges of the top and bottom surfaces of the AFM TI multilayers. Unlike the conventional QSH effect, the HQSH effect survives the breaking of time-reversal symmetry (TRS) and thus represents a different kind of topological phenomenon. The helical hinge modes are sustainable to inelastic scattering and TRS-breaking disorder, which can be observed in macroscopic samples. We show that this HQSH effect can be understood as a three-dimensional generalization of the Su-Schrieffer-Heeger model and its topology is characterized by the spin Chern number. At last, we propose that the HQSH effect can be realized in newly found intrinsic AFM TI materials (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ or magnetic-doped TI multilayers by current experimental setups.
Two-dimensional MX Dirac materials and quantum spin Hall insulators with tunable electronic and topological properties

Yan-Fang Zhang,Jinbo Pan,Huta Banjade,Jie Yu,Hsin Lin,Arun Bansil,Shixuan Du,Qimin Yan

DOI: https://doi.org/10.1007/s12274-020-3022-3

IF: 9.9

2020-08-28

Nano Research

Abstract:<p class="a-plus-plus">We propose a novel class of two-dimensional (2D) Dirac materials in the MX family (M = Be, Mg, Zn and Cd, X = Cl, Br and I), which exhibit graphene-like band structures with linearly-dispersing Dirac-cone states over large energy scales (0.8–1.8 eV) and ultra-high Fermi velocities comparable to graphene. Spin-orbit coupling opens sizable topological band gaps so that these compounds can be effectively classified as quantum spin Hall insulators. The electronic and topological properties are found to be highly tunable and amenable to modulation via anion-layer substitution and vertical electric field. Electronic structures of several members of the family are shown to host a Van-Hove singularity (VHS) close to the energy of the Dirac node. The enhanced density-of-states associated with these VHSs could provide a mechanism for inducing topological superconductivity. The presence of sizable band gaps, ultra-high carrier mobilities, and small effective masses makes the MX family promising for electronics and spintronics applications.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Observation of the fractional quantum spin Hall effect in moiré MoTe2

Kaifei Kang,Bowen Shen,Yichen Qiu,Kenji Watanabe,Takashi Taniguchi,Jie Shan,Kin Fai Mak

2024-02-12

Abstract:Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap like an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities. To date, experimental studies have found only integer QSH insulators with counter-propagating up-spins and down-spins at each edge leading to a quantized conductance G0=e^2/h. Here we report transport evidence of a fractional QSH insulator in 2.1-degree-twisted bilayer MoTe2, which supports spin-Sz conservation and flat spin-contrasting Chern bands. At filling factor v = 3 of the moiré valence bands, each edge contributes a conductance 3/2 G0 with zero anomalous Hall conductivity. The state is likely a time-reversal pair of the even-denominator 3/2-fractional Chern insulators. Further, at v = 2, 4 and 6, we observe a single, double and triple QSH insulator with each edge contributing a conductance G0, 2G0 and 3G0, respectively. Our results open up the possibility of realizing time reversal symmetric non-abelian anyons and other unexpected topological phases in highly tunable moiré materials.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons
Tuning the Electronic and Magnetic Properties of Double Transition Metal MCrCT$_2$ (M = Ti, Mo) Janus MXenes for Enhanced Spintronics and Nanoelectronics

Swetarekha Ram,Namitha Anna Koshi,Seung-Cheol Lee,Satadeep Bhattacharjee

2024-01-11

Abstract:Janus MXenes, a new category of two-dimensional (2D) materials, shows promising potential for advances in optoelectronics, spintronics and nanoelectronics. Our theoretical investigations not only provide interesting insights but also highlight the promise of Janus MCrCT$_2$ (M = Ti, Mo; T = O, F, OH) MXenes for future spintronic applications and highlight the need for their synthesis. Electronic structure analysis shows different metallic and semi-metallic properties: MoCrCF$_2$ exhibits metallic properties, TiCrC(OH)$_2$ and MoCrCO$_2$ exhibit near semi-metallicity with spin polarization values of 61\% and 86\%, respectively, while TiCrCO$_2$ and TiCrCF$_2$ are completely half-metallic with 100\% spin polarization at the Fermi level. All studied Janus MXenes exhibit intrinsic ferromagnetism, which is mainly attributed to the chromium (Cr) atoms, as shown by the spin density difference plots. Among them, the TiCrCO$_2$ monolayer stands out with the highest exchange constant and ferromagnetic transition temperature (T$_c$). Notably, the O-terminated Janus MXenes exhibit weak perpendicular magnetic anisotropy, in contrast to the in-plane anisotropy observed for F and OH-terminated MXenes, making them particularly interesting for future spintronic applications which we further demonstrate with micromagnetic simulation which reveal distinct current-induced switching behaviors in these Janus MXenes with different surface terminations.

Materials Science
Engineering Quantum Anomalous Hall Effect in Monolayer Janus MnBi2SexTe4-x

Jiale Chen,Jun Hu

2024-09-12

Abstract:Exploring intrinsic magnetic topological insulators (TIs) for next-generation spintronic devices is still challenging in recent years. Here, we present a theoretical investigation on the electronic, magnetic and topological properties of monolayer (ML) Janus MnBi2TexSe4-x, derived from two trivial magnetic semiconductors ML MnBi2Se4 and MnBi2Te4. Our band structure analysis reveals that two out of the eight Janus structures exhibit band inversion induced by spin-orbit coupling. These structures are confirmed to have nonzero integer Chern numbers, indicating their topological nature. Moreover, the topological state is robust under moderate biaxial strains. Interestingly, applying compressive strain results in a high Chern number of 2 and enhances their magnetic stability at elevated temperatures. Our findings offer an effective strategy to engineer magnetic TI states within the ML MnBi2Te4 family.

Materials Science
Intrinsic and Anisotropic Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers

Tao Hu,Fanhao Jia,Guodong Zhao,Jiongyao Wu,Alessandro Stroppa,Wei Ren

DOI: https://doi.org/10.1103/physrevb.97.235404

2018-01-01

Abstract:Transition-metal dichalcogenides (TMDs) monolayers have been considered as important two-dimensional semiconductor materials for the study of fundamental physics in the field of spintronics. However, the out-of-plane mirror symmetry in TMDs may constrain electrons' degrees of freedom and it may limit spin-related applications. Recently, a newly synthesized Janus TMDs MoSSe was found to intrinsically possess both the in-plane inversion and the out-of-plane mirror-symmetry breaking. Here we performed first-principles calculations in order to systematically investigate the electronic band structures of a series of Janus monolayer TMDs with chemical formula $MXY\phantom{\rule{0.16em}{0ex}}(M=\mathrm{Mo},\phantom{\rule{0.16em}{0ex}}\mathrm{W}\phantom{\rule{0.16em}{0ex}}\mathrm{and}\phantom{\rule{0.16em}{0ex}}X,Y=\mathrm{S},\phantom{\rule{0.16em}{0ex}}\mathrm{Se},\phantom{\rule{0.16em}{0ex}}\mathrm{Te})$. It is found that they possess robust electronic properties like their parent phases. We explored also the effect of perpendicular external electric field and in-plane biaxial strain on the Rashba spin splittings. The Zeeman-type spin splitting and valley polarization at $K({K}^{\ensuremath{'}})$ point are well preserved and we observed a Rashba-type spin splitting around the $\mathrm{\ensuremath{\Gamma}}$ point for all the $MXY$ systems. We have also found that these spin splittings can be enhanced by an external electric field collinear with the local electric field derived by the polar bonds and by the compressive strain. The Rashba parameters change linearly with the external electric field, but nonlinearly with the biaxial strain. The compressive strain is found to enhance significantly the anisotropic Rashba spin splitting.
Multi-level chiral edge states in Janus M2XS2Se2 (M = V, Ti; X = W, Mo) monolayers with high Curie temperature and sizable nontrivial topological gaps

Li Deng,Xiang Yin,Yanzhao Wu,Junwei Tong,Gaowu W. Qin,Xianmin Zhang

DOI: https://doi.org/10.1039/d4cp03325f

IF: 3.3

2024-10-22

Physical Chemistry Chemical Physics

Abstract:Quantum anomalous Hall (QAH) insulators with dissipation-less chiral edge channels provide the ideal platforms for the exploration of topological materials and low-power spintronic devices. However, the ultralow operation temperature and small nontrivial gap are the bottlenecks for QAH insulators towards future applications. Here, a new family of QAH insulators, that is, the Janus M2XS2Se2 (M = V, Ti; X = W, Mo) monolayers are proposed, which are ferromagnets with large perpendicular magnetic anisotropy (PMA) and high Curie temperature above room-temperature. Moreover, the present M2XS2Se2 monolayers hold sizable nontrivial topological gaps, resulting in the 1st chiral edge state with Chern number C=-1. Unexpectedly, there also exists an occupied 2nd chiral edge state below the Fermi level. Although all M2XS2Se2 monolayers remain the characteristic of PMA by applying the biaxial strain, various topological phase transitions are present. V2WS2Se2 monolayer preserves the QAH state regardless of strain, while the V2MoS2Se2 and Ti2WS2Se2 monolayers transform from QAH states to metallic states under the tensile strains. The present M2XS2Se2 monolayers show the competitive advantages among the reported materials for the development of topological electronic devices.

chemistry, physical,physics, atomic, molecular & chemical
Quantum Anomalous Valley Hall Effect in Ferromagnetic MXenes with Asymmetric Functionalization

Shuo Li,Thomas Frauenheim,Junjie He

DOI: https://doi.org/10.1039/d3nr04188c

IF: 6.7

2023-09-23

Nanoscale

Abstract:The potential to detect and manipulate the valley degree of freedom within two-dimensional hexagonal lattices possessing both inversion asymmetry and time-reversal symmetry is theoretically feasible. The intrinsic ferrovalley polarizations in MXenes could be induced by asymmetric surface functionalization to break their inversion symmetry and the presence of spin-orbital couplings ensures their time-reversal symmetry. Our results indicate that the ferromagnetic Cr2COF MXene with Janus functionalization becomes an intrinsic Chern insulator with large spin-valley polarizations and belongs to the family of the quantum anomalous valley Hall effect (QAVHE) materials, based on Berry curvatures and edge states calculations. Applying chemical engineering of functionalizations to magnetic MXenes allows us to tune the structure-property relationship in the 2D layers to obtain desirable spin-valley coupling. Our theoretical insight into the QAVHE on the magnetic MXenes with asymmetry functionalization provides a new opportunity for valleytronics and spintronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Monolayer V2MX4: A new family of quantum anomalous Hall insulators

Yadong Jiang,Huan Wang,Kejie Bao,Zhaochen Liu,Jing Wang

DOI: https://doi.org/10.1103/PhysRevLett.132.106602

2024-02-10

Abstract:We theoretically propose that the van der Waals layered ternary transition metal chalcogenide V$_2 MX_4$ ($M=$ W, Mo; $X=$ S, Se) is a new family of quantum anomalous Hall insulators with sizable bulk gap and Chern number $\mathcal{C}=-1$. The large topological gap originates from the \emph{deep} band inversion between spin up bands contributed by $d_{xz},d_{yz}$ orbitals of V and spin down band from $d_{z^2}$ orbital of $M$ at Fermi level. Remarkably, the Curie temperature of monolayer V$_2 MX_4$ is predicted to be much higher than that of monolayer MnBi$_2$Te$_4$. Furthermore, the thickness dependence of the Chern number for few multilayers shows interesting oscillating behavior. The general physics from the $d$-orbitals here applies to a large class of ternary transition metal chalcogenide such as Ti$_2$W$X_4$ with the space group $P$-$42m$. These interesting predictions, if realized experimentally, could greatly promote the research and application of topological quantum physics.

Mesoscale and Nanoscale Physics,Materials Science
Prediction of Intrinsic Two-Dimensional Non-Dirac Topological Insulators in Triangular Metal-Organic Frameworks

Jiayong Zhang,Bao Zhao,Chunlan Ma,Zhongqin Yang

DOI: https://doi.org/10.1063/1.5063664

IF: 4

2019-01-01

Applied Physics Letters

Abstract:Two-dimensional (2D) metal-organic frameworks (MOFs) with topologically nontrivial states have attracted considerable attention recently. Based on ab initio calculations, we demonstrate that Cu(C21N3H15) with a triangular lattice is an intrinsic quantum anomalous Hall insulator. The multiple p (px and py)-like molecular orbitals of the C21N3H15 molecule with C3 symmetry give rise to a degenerate energy point at the Γ point with quadratic non-Dirac band dispersions. When the spin-orbit coupling is included, the bandgap is opened around the non-Dirac Γ point and a topologically nontrivial state is achieved. Quantum spin Hall effects can also be realized in this kind of 2D triangular lattice MOF if the time-reversal symmetry is preserved, as proposed in the Ni(C21N3H15) lattice. The physical mechanism is analyzed through a k · p model built. Our results present that the 2D triangular lattice MOFs are excellent candidates for producing 2D topological insulators and might have promising applications in future microelectronics and spintronics.
Control of spintronic and electronic properties of bimetallic and vacancy-ordered vanadium carbide MXenes via surface functionalization

Shuo Li,Junjie He,Petr Nachtigall,Lukáš Grajciar,Federico Brivio

DOI: https://doi.org/10.48550/arXiv.1910.01509

2019-10-03

Materials Science

Abstract:MXenes are 2D transition metal carbides with high potential for overcoming limitations of conventional two-dimensional electronics. In this context, various MXenes have shown magnetic properties suitable for applications in spintronics, yet the number of MXenes reported so far is far smaller than their parental MAX phases. Therefore, we have studied the structural, electronic and magnetic properties of bimetallic and vacancy-ordered MXenes derived from a new $(V_{2/3}Zr_{1/3})_2AlC $ MAX phase to assess whether MXene exfoliation would return stable magnetic materials. In particular, we have investigated the properties of pristine and surface-functionalized $(V_{2/3}Zr_{1/3})_2CX_2$ bimetallic and $(V_{2/3} \square_{1/3})_2CX2$ vacancy-ordered MXenes with X = O, F and OH. Our density functional theory (DFT) calculations showed that modifying the MXene stoichiometry and/or MXene surface functionalization changes MXene properties. After testing all possible combinations of metallic motifs and functionalization, we identified $V_{2/3}Zr_{1/3})_2CX_2$, $(V_{2/3}\square_{1/3})_2CF_2$ and $(V_{2/3}\square_{1/3})_2C(OH)_2$ as stable structures. Among them, $(V_{2/3}Zr_{1/3})_2CO_2$ MXene is predicted to be an FM intrinsic half-semiconductor with a remarkably high Curie temperature ($T_C$)) of 270 K. The $(V_{2/3}Zr_{1/3})_2C(OH)_2$ MXene exhibits a rather low work function (WF) (1.37 eV) and is thus a promising candidate for ultra-low work function electron emitters. Conversely, the $(V_{2/3}\square_{1/3})_2CF_2$ MXene has a rather high WF and hence can be used as a hole injector for Schottky-barrier-free contact applications. Overall, our proof-of-concept study shows that theoretical predictions of MXene exfoliation and properties support further experimental research towards developing spintronics devices.

Quantum Spin Hall Phase in Mo2M2C3O2(M = Ti, Zr, Hf) MXenes

Prediction of the Quantum Spin Hall Effect in Monolayers of Transition-Metal Carbides Mc (M. =. Ti, Zr, Hf)

Quantum Spin Hall Effect in Two-Dimensional Transition-Metal Chalcogenides MX5 (M = Zr, Hf and X = S, Se, Te)

Prediction of T- and H-Phase Two-Dimensional Transition-Metal Carbides/Nitrides and Their Semiconducting-Metallic Phase Transition.

Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Topological insulators in ordered double transition metals M$'_2$M$"$C$_2$ (M$'$= Mo, W; M$"$= Ti, Zr, Hf) MXenes

Quantum spin Hall insulating phase in two-dimensional MA2Z4 materials: SrTl2Te4 and BaTl2Te4

Double Quantum Spin Hall Phase in Moiré WSe 2

Two-Dimensional Ferroelastic Topological Insulators in Single-Layer Janus Transition Metal Dichalcogenides MSSe (M=Mo, W)

Computational design of double transition metal MXenes with intrinsic magnetic properties

Hinged Quantum Spin Hall Effect in Antiferromagnetic Topological Insulators

Two-dimensional MX Dirac materials and quantum spin Hall insulators with tunable electronic and topological properties

Observation of the fractional quantum spin Hall effect in moiré MoTe2

Tuning the Electronic and Magnetic Properties of Double Transition Metal MCrCT$_2$ (M = Ti, Mo) Janus MXenes for Enhanced Spintronics and Nanoelectronics

Engineering Quantum Anomalous Hall Effect in Monolayer Janus MnBi2SexTe4-x

Intrinsic and Anisotropic Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers

Multi-level chiral edge states in Janus M2XS2Se2 (M = V, Ti; X = W, Mo) monolayers with high Curie temperature and sizable nontrivial topological gaps

Quantum Anomalous Valley Hall Effect in Ferromagnetic MXenes with Asymmetric Functionalization

Monolayer V2MX4: A new family of quantum anomalous Hall insulators

Prediction of Intrinsic Two-Dimensional Non-Dirac Topological Insulators in Triangular Metal-Organic Frameworks

Control of spintronic and electronic properties of bimetallic and vacancy-ordered vanadium carbide MXenes via surface functionalization