Fabrication and Testing of Indium-Tin-Oxide Thin-Film Gas-Sensor-Array for Indoors Hazerdous Gases Detection

季振国,孙兰侠,何振杰,范镓,王玮,方向生,陈裕泉
DOI: https://doi.org/10.3969/j.issn.1004-1699.2004.02.026
2004-01-01
Abstract:Thin-film gas-sensor-array of indium-tin-oxide were fabricated by sol-gel dip-coating process using SnCl 2·2H 2O and InCl 3·4H 2O as source materials for tin and indium. The In/Sn ratio of individual sensor film was different from each other, leading to the formation of a gas-sensor-array in which the carrier concentration, the carrier type, and the Fermi level of each sensor film were different, determined by the Hall effect measurement. The conducting type of the sensor film is n-type when In/Sn low, or close to unity, while it is p-type when In/Sn is in the intermediate range. Gas detection measurements of the array show good selectivity for four common indoor hazardous gases (formaldehyde, benzene, dimethyl benzene, methyl benzene). It is suggested that charge transfer between the absorbing gases and the sensor films are different for each sensor because of different Fermi level of the sensor film caused by different carrier concentration and different conducting type, which increased the selectivity of the sensor array.
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