Tensile Strain Induced Narrowed Bandgap of TiO2 Films: Utilizing the Two-Way Shape Memory Effect of TiNiNb Substrate and In-Situ Mechanical Bending

Minshu Du,Lishan Cui,Qiong Wan
DOI: https://doi.org/10.1016/j.mseb.2016.01.012
IF: 3.407
2016-01-01
Materials Science and Engineering B
Abstract:Elastic strain is one of the methods to alter the band gap of semiconductors. However, relevant experimental work is limited due to the difficulty in imposing strain. Two new methods for imposing tensile strain to TiO2 film were introduced here. One is by utilizing the two-way shape memory effect of NiTiNb substrate, and the other method is in-situ mechanical bending. The former method succeeded in imposing 0.4% tensile strain to anatase TiO2 nanofilm, and strain narrowed the bandgap of TiO2 by 60 meV. The latter method enabled rutile TiO2 thin film under the 0.5% biaxially tensile-strained state, which contributes to a narrowed bandgap with, Delta E-g of 70 meV. Also, photocurrents of both strained TiO2 films increased by 1.5 times compared to the strain-free films, which indirectly verified the previous DFT prediction proposed by Thulin and Guerra in 2008 that tensile strain could improve the mobility and separation of photo-excite carriers. (C) 2016 Elsevier B.V. All rights reserved.
What problem does this paper attempt to address?