Modeling and Design of A 3D Interconnect Based Circuit Cell Formed with 3D SiP Techniques Mimicking Brain Neurons for Neuromorphic Computing Applications

Min Miao,Liyuan Wang,Tianfang Chen,Xiaoyang Duan,Jincan Zhang,Na Li,Lei Sun,Runiu Fang,Xin Sun,Huan Liu,Yufeng Jin
DOI: https://doi.org/10.1109/ectc.2018.00078
2018-01-01
Abstract:Neuromorphic computing that physically mimics human brain, is considered as one of the rebooting computing frontiers, promising in far-reaching applications like machine learning. Progress in research on memristor-based synapses has far exceeded that on neurons and interconnects. Also as the essential parts in physical implementation of brain-inspired computing, neuron circuit cell and interconnects may both greatly benefit from the high flexibility and parallelism of 3D heterogeneous integration technologies based on TSV (through semiconductor/substrate via). In this paper, a 3D circuit cell mimicking a brain neuron is first proposed, featuring TSVs with cross-sections distinct from those for signal or power transmission between device strata. These so- called "neural TSVs", with co-axial Cu filling, oxide liners and N+ doped outer plate, are used as input coupling capacitors to a MOS transistor on the same Si active interposer or that on a chip surface-mounted onto a passive interposer. TSVs and the transistor together compose a neuron MOSFET, which acts as a capacitive threshold summator and is further combined with a CMOS inverter to create a 3D neuron circuit cell. Analytical models are established, and electromagnetic field simulations are used to reveal the parasitics. Then, the behavior of the design is analyzed with HSPICE simulators. At last, a Rosenblatt perceptron is designed to demonstrate the network-level functionality of the neuron cell. A further integration of the discussed neuron circuit cell, memristor synapses, and 3D TSV-based interconnects may enable a highly intricate and flexible 3D network, implementing a brain-inspired 3D SoC.
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