Atomically Thin Semiconducting Penta-Pdp2 and PdAs2 with Ultrahigh Carrier Mobility

Hao Yuan,Zhenyu Li,Jinlong Yang

DOI: https://doi.org/10.1039/c8tc03368d

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:Two dimensional materials with a pentagonal structure and ultra-high carrier mobilities have been designed theoretically.

What problem does this paper attempt to address?

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Wai Leong Chow,Peng Yu,Fucai Liu,Jinhua Hong,Xingli Wang,Qingsheng Zeng,Chuang-Han Hsu,Chao Zhu,Jiadong Zhou,Xiaowei Wang,Juan Xia,Jiaxu Yan,Yu Chen,Di Wu,Ting Yu,Zexiang Shen,Hsin Lin,Chuanhong Jin,Beng Kang Tay,Zheng Liu

DOI: https://doi.org/10.1002/adma.201602969

IF: 29.4

2017-01-01

Advanced Materials

Abstract:Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (mu(e(max)) = 216 cm(2) V-1 s(-1)) and on/off ratio up to 10(3). Hole-dominated-transport PdSe2 can be obtained by molecular doping using F-4-TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs.
Electronic, Elastic, Optical and Thermal Transport Properties of Penta-Pdas2 Monolayer: First-principles Study

Xiao-Long Pan,Ying-Qin Zhao,Zhao-Yi Zeng,Xiang-Rong Chen,Qi-Feng Chen

DOI: https://doi.org/10.1016/j.ssc.2019.113802

IF: 1.934

2019-01-01

Solid State Communications

Abstract:PdAs2 monolayer, a new pentagonal two-dimensional (2D) material, greatly attracts widely research interest due to its extremely high carrier mobility with a direct band gap. We have systematically studied the electronic structure, elastic, optical and thermal transport properties of monolayer PdAs2 from first-principles calculations. Our electronic structure calculations show that the monolayer PdAs2 is a semiconductor with a direct band gap of 0.78 eV. Tensile strain has a good regulating effect on the band gap, which can be adjusted from 0.01 eV to 0.84 eV. The calculated elastic constants of monolayer PdAs2 confirm that the PdAs2 monolayer is mechanically stable. The calculated optical properties reveal that the energy range of the absorption spectrum is 1 eV-15 eV. The absorption range of PdAs2 monolayer is mainly visible and ultraviolet light. Under the tensile strain, the absorption spectrum shows obvious redshift. With the increase of strain, the reflectivity and refractivity increase. The calculated thermal conductivity of the monolayer PdAs2 at 300 K is 1.04 W/(mK), which is lower than that of known pentagonal monolayer. In addition, the effects of phonon free path, group velocity and phonon scattering rate on lattice thermal conductivity are analyzed.
Two-Dimensional Pentagonal Materials with Parabolic Dispersion and High Carrier Mobility

Xiaofei Shao,Xiaobiao Liu,Xikui Ma

DOI: https://doi.org/10.3390/ma17225543

IF: 3.4

2024-11-17

Materials

Abstract:Materials with high carrier mobility, represented by graphene, have garnered significant interest. However, the zero band gap arising from linear dispersion cannot achieve an ideal on–off ratio in field-effect transistors (FETs), limiting practical applications in certain fields. In contrast, parabolic dispersion usually exhibits extremely high carrier mobility and an appropriate band gap. In this work, we predicted a planar pentagonal lattice composed entirely of pentagons (namely penta-MX2 monolayer), where M = Ni, Pd and Pt, X = group V elements. Using first-principles calculations, we demonstrated a parabolic dispersion within this framework, which results in intriguing phenomena, such as a direct band gap (0.551–1.105 eV) and extraordinary high carrier mobility. For penta-MX2 monolayer, the carrier mobility can attain ~1 × 108 cm2 V−1 s−1 (PBE), surpassing those of black phosphorene, graphene and 2D hexagonal materials. This monolayer also displays anisotropic mechanical properties and significant absorption peaks in the ultraviolet spectrum. Remarkably, 2D penta-MX2 monolayers are promising for successful experimental exfoliation, particularly when X is a nitrogen element, opening up new possibilities for designing two-dimensional semiconductor materials characterized by high carrier mobility.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Chenmu Zhang,Ruoyu Wang,Himani Mishra,Yuanyue Liu

DOI: https://doi.org/10.1103/PhysRevLett.130.087001

2023-02-24

Abstract:Two-dimensional semiconductors have demonstrated great potential for next-generation electronics and optoelectronics, however, the current 2D semiconductors suffer from intrinsically low carrier mobility at room temperature, which significantly limits their applications. Here we discover a variety of new 2D semiconductors with mobility 1 order of magnitude higher than the current ones and even higher than bulk silicon. The discovery was made by developing effective descriptors for computational screening of the 2D materials database, followed by high-throughput accurate calculation of the mobility using a state-of-the-art first-principles method that includes quadrupole scattering. The exceptional mobilities are explained by several basic physical features; particularly, we find a new feature: carrier-lattice distance, which is easy to calculate and correlates well with mobility. Our Letter opens up new materials for high performance device performance and/or exotic physics, and improves the understanding of the carrier transport mechanism.
Ultrahigh carrier mobility and light-harvesting performance of 2D penta-PdX2 monolayer

Dhara Raval,Bindiya Babariya,Sanjeev K. Gupta,P. N. Gajjar,Rajeev Ahuja

DOI: https://doi.org/10.1007/s10853-020-05501-w

IF: 4.5

2020-11-10

Journal of Materials Science

Abstract:In this study, we have examined the geometrical, electronic and optical properties of penta-PdX2 (X = As,P) using density functional calculation. The electronic structure calculations show that the penta-PdAs2 and PdP2 are semiconductors with direct band gaps of 0.34 eV and 0.30 eV, respectively. The dynamical stability of penta-PdX2 monolayer is proved by the absence of imaginary frequencies in the phonon dispersion curve. By applying a biaxial strain (for PdAs2: − 6% to + 6% and for PdP2: − 5.5% to + 5.5%) on the monolayer, the effective mass and band edges are tuned effectively. Remarkably, the range of penta-PdX2 carrier mobility was obtained in an extremely high order of 105 cm2 V−1 s−1 for holes and 104 cm2 V−1 s−1 for electrons. The optical properties of penta-PdX2 were also strained-tunable and exhibit outstanding absorption of infrared, visible and ultraviolet light. More importantly, the band edges alignment has tunable with implemented external electric field (V/Å) along the z-direction. Our work would stimulate the fabrication of penta-PdX2 monolayer, and it is envisioned that it is an appropriate future candidate for optoelectronic and ultra-fast electronic applications.

materials science, multidisciplinary
Carbon Phosphide Monolayer with Superior Carrier Mobility

Gaoxue Wang,Ravindra Pandey,Shashi P. Karna

DOI: https://doi.org/10.1039/c6nr00498a

2016-01-30

Abstract:Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of carbon phosphide (CP) monolayer consisted of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as {\alpha}-CP and \b{eta}-CP with puckered and buckled surfaces, respectively are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The {\gamma}-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest the binary CP monolayer to be yet unexplored 2D materials holding great promises for applications in high-performance electronics and optoelectronics.

Materials Science
Penta-Pt2N4: an Ideal Two-Dimensional Material for Nanoelectronics.

Zhao Liu,Haidi Wang,Jiuyu Sun,Rujie Sun,Z. F. Wang,Jinlong Yang

DOI: https://doi.org/10.1039/c8nr05561k

2018-01-01

Abstract:Since the discovery of graphene, two-dimensional (2D) materials have paved a new routine for designing high-performance nanoelectronic devices. To facilitate the device applications, there are three key requirements for a material: sizeable band gap, high carrier mobility and robust environmental stability. However, for the hottest 2D materials studied in recent years, graphene is gapless, transition metal dichalcogenides have low carrier mobility, and black phosphorene is environmentally sensitive. So far, these three characteristics can seldom be satisfied in one single material. Therefore, it becomes a great challenge for finding an ideal 2D material to overcome such a limitation. In this work, we theoretically predict a novel planar 2D material: Penta-Pt2N4, which are designed by the fantastic Cario pentagonal tiling as well as the rare nitrogen double bond. Most significantly, the 2D Penta-Pt2N4 exhibits excellent intrinsic properties, including large direct band gap up to 1.51 eV, high carrier mobility up to 105 cm2V-1s-1, giant Young's module up to 0.70 TPa, and robust dynamic, thermal and chemical stability. Moreover, Penta-Pt2N4 is a global minimal with PtN2 stoichiometry in 2D, so we also propose a CVD/MBE scheme to enable its experimental synthesis. We envision that the 2D Penta-Pt2N4 may find a wide application for future nanoelectronics.
Discovering and Understanding 2D Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Chenmu Zhang,Ruoyu Wang,Himani Mishra,Yuanyue Liu

DOI: https://doi.org/10.48550/arXiv.2208.10663

2022-08-23

Materials Science

Abstract:Two-dimensional (2D) semiconductors have demonstrated great potential for next-generation electronics and optoelectronics. However, the current 2D semiconductors suffer from intrinsically low carrier mobility at room temperature, which significantly limits its applications. Here we discover a variety of new 2D semiconductors with mobility one order of magnitude higher than the current ones. The discovery is made by developing effective descriptors for high-throughput computationally screening of the 2D materials database, followed by using state-of-the-art first principles method to accurately calculate the mobility. Further analyses attribute their exceptional mobilities to small effective mass, high sound velocity, high optical phonon frequency, small ratio of Born charge vs. polarizability, and/or weak electron-phonon coupling. Our work opens up new materials to realize high device performance and/or exotic physics that are difficult to achieve previously, and improves the understanding of the carrier transport mechanism.
Quantum octets in high mobility pentagonal two-dimensional PdSe 2

Yuxin Zhang,Haidong Tian,Huaixuan Li,Chiho Yoon,Ryan A. Nelson,Ziling Li,Kenji Watanabe,Takashi Taniguchi,Dmitry Smirnov,Roland K. Kawakami,Joshua E. Goldberger,Fan Zhang,Chun Ning Lau

DOI: https://doi.org/10.1038/s41467-024-44972-2

IF: 16.6

2024-01-27

Nature Communications

Abstract:Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe 2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm 2 /Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.

multidisciplinary sciences
Penta-CN2 revisited: Superior stability, synthesis condition exploration, negative Poisson's ratio and quasi-flat bands

Haidi Wang,Zhao Chen,Zhao Liu

DOI: https://doi.org/10.1016/j.apsusc.2022.152536

IF: 6.7

2022-01-01

Applied Surface Science

Abstract:Pentagon-based two-dimensional (2D) materials have received tremendous attention owing to their unique atomic configurations, extraordinary physical and chemical properties, and their potential for broad applications. As one member of 2D penta-based materials, penta-CN2 has been proposed to be a high energy density material. Here, based on an in-depth thermodynamic and ab initio molecular dynamics analysis, we reveal that penta-CN2 has superior stability with an ultrahigh melting point up to 2500 K. Moreover, it remains an amorphous C-N network under the melting state, which makes penta-CN2 suitable for coating material in aviation area. Encouraged by the prospect of excellent applications, we further propose an experimental condition for synthesizing the penta-CN2. Specifically, the Nb(100) surface would be a potential substrate, the CH4 and N2H4 could be used as carbon and nitrogen sources under T = 1600 K with pressure p(H-2) = p(N2H4) = 4 x 10(-4) bar, p(CH4) = (10 & SIM; 100)p(H-2). Further calculation of electro-mechanical properties shows that penta-CN2 has intriguing properties, which includes large-range negative Poisson's ratio and paramagnetic insulator to ferromagnetic half-metal transition induced by hole doping. Our work is expected to give a profound view of penta-CN2 and guide the future experiment works.
MatHub-2d: A database for transport in 2D materials and a demonstration of high-throughput computational screening for high-mobility 2D semiconducting materials

Mingjia Yao,Jialin Ji,Xin Li,Zhenyu Zhu,Jun-Yi Ge,David J. Singh,Jinyang Xi,Jiong Yang,Wenqing Zhang

DOI: https://doi.org/10.1007/s40843-022-2401-3

2023-04-20

Science China Materials

Abstract:Two-dimensional materials (2DMs) provide remarkable physical and chemical properties not found in other classes of materials. A crucial property for electronic device applications is carrier mobility. We report the use of high-throughput computational screening to discover high-mobility 2DM semiconductors. The results are based on a newly developed MatHub-2d database containing structural information and ab initio data on ~1900 2DM entries. Search criteria based on the band gap, magnetism, elasticity, and deformation potential are used. Following an initial screening, which leaves 133 candidates, we evaluate mobilities based on the deformation potential method and Boltzmann transport theory. Finally, we predict 19 2DMs with high mobilities (>10 3 cm 2 V −1 s −1 ) at room temperature and good dynamic stability. These compounds have favorable mobilities due to combinations of small deformation potential constants, large elastic moduli, and small effective masses. Notably, there are two types of compounds, particularly BX (X = P, As, Sb) and ZO 2 (Z = Ge, Sn, Pb), with in-plane isotropic high mobilities. Flower-like chemical bonds benefit good p-type and n-type electrical transport in BX, while Z-O antibonding states cause favorable electron conduction in ZO 2 -type 2DMs. In addition to these 2DMs, Si 2 P 2 , Ga 2 O 2 , and Ge 2 N 2 also exhibit high electron mobilities, which have never been reported. The predicted high-mobility 2DMs provide new opportunities for semiconductor electronic devices.

materials science, multidisciplinary
Exceptionally high charge mobility in phthalocyanine-based poly(benzimidazobenzophenanthroline)-ladder-type two-dimensional conjugated polymers

Mingchao Wang,Shuai Fu,Petko Petkov,Yubin Fu,Zhitao Zhang,Yannan Liu,Ji Ma,Guangbo Chen,Sai Manoj Gali,Lei Gao,Yang Lu,Silvia Paasch,Haixia Zhong,Hans-Peter Steinrück,Enrique Cánovas,Eike Brunner,David Beljonne,Mischa Bonn,Hai I. Wang,Renhao Dong,Xinliang Feng

DOI: https://doi.org/10.1038/s41563-023-01581-6

IF: 41.2

2023-06-20

Nature Materials

Abstract:Two-dimensional conjugated polymers (2DCPs), composed of multiple strands of linear conjugated polymers with extended in-plane π-conjugation, are emerging crystalline semiconducting polymers for organic (opto)electronics. They are represented by two-dimensional π-conjugated covalent organic frameworks, which typically suffer from poor π-conjugation and thus low charge carrier mobilities. Here we overcome this limitation by demonstrating two semiconducting phthalocyanine-based poly(benzimidazobenzophenanthroline)-ladder-type 2DCPs (2DCP-MPc, with M = Cu or Ni), which are constructed from octaaminophthalocyaninato metal( ii ) and naphthalenetetracarboxylic dianhydride by polycondensation under solvothermal conditions. The 2DCP-MPcs exhibit optical bandgaps of ~1.3 eV with highly delocalized π-electrons. Density functional theory calculations unveil strongly dispersive energy bands with small electron–hole reduced effective masses of ~0.15 m 0 for the layer-stacked 2DCP-MPcs. Terahertz spectroscopy reveals the band transport of Drude-type free carriers in 2DCP-MPcs with exceptionally high sum mobility of electrons and holes of ~970 cm 2 V −1 s −1 at room temperature, surpassing that of the reported linear conjugated polymers and 2DCPs. This work highlights the critical role of effective conjugation in enhancing the charge transport properties of 2DCPs and the great potential of high-mobility 2DCPs for future (opto)electronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Hydrogenated PtP2 Monolayer: Theoretical Predictions on the Structure and Charge Carrier Mobility

Chunying Pu,Jiahui Yu,Rongmei Yu,Xin Tang,Dawei Zhou

DOI: https://doi.org/10.1039/c9tc03479j

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Two-dimensional semiconducting materials have attracted intensive attention due to their superior transport and optical properties and their potential applications in future nanoscale devices. However, the number of wide band gap two-dimensional (2D) materials is still limited in all known 2D materials. In this study, by means of the particle-swarm optimization method and density functional theory calculations, we predicted a new wide gap 2D anisotropic material, a hydrogenated PtP2 monolayer (PtP2H2). The structure is found to be stable thermally, dynamically, and mechanically and exhibits an anisotropic mechanical behavior with respect to the Young's modulus and Possion's ratio. Using the hybrid functional of Heyd-Scuseria-Ernzerhof (HSE06) calculations to calculate the band structure of PtP2H2 indicate that the structure is a wide gap semiconductor with an indirect band gap of 3.34 eV. According to the deformation potential theory, the HSE calculations for the carrier mobility reveal that PtP2H2 has higher carrier mobilities along the b direction (2.38 x 10(3) for electrons and 2.26 x 10(3) cm(2) V-1 s(-1) for holes, respectively) than those along the a direction (1.74 x 10(3) for electrons and 1.06 x 10(3) cm(2) V-1 s(-1) for holes, respectively), and it shows anisotropy in-plane. Furthermore, PtP2H2 exhibits strong optical absorption in the ultraviolet region. Our calculations suggest that PtP2H2 has potential applications in optoelectronics owing to its wide band gap and high carrier mobility.
Semiconducting Conjugated Coordination Polymer with High Charge Mobility Enabled by "4 + 2" Phenyl Ligands.

Xing Huang,Shuai Fu,Cong Lin,Yang Lu,Mingchao Wang,Peng Zhang,Chuanhui Huang,Zichao Li,Zhongquan Liao,Ye Zou,Jian Li,Shengqiang Zhou,Manfred Helm,Petko St Petkov,Thomas Heine,Mischa Bonn,Hai I. Wang,Xinliang Feng,Renhao Dong

DOI: https://doi.org/10.1021/jacs.2c11511

IF: 15

2023-01-01

Journal of the American Chemical Society

Abstract:Electrically conductive coordination polymers and metal-organic frameworks are attractive emerging electroactive materials for (opto-)electronics. However, developing semiconducting coordination polymers with high charge carrier mobility for devices remains a major challenge, urgently requiring the rational design of ligands and topological networks with desired electronic structures. Herein, we demonstrate a strategy for synthesizing high-mobility semiconducting conjugated coordination polymers (c-CPs) utilizing novel conjugated ligands with D2h symmetry, namely, "4 + 2" phenyl ligands. Compared with the conventional phenyl ligands with C6h symmetry, the reduced symmetry of the "4 + 2" ligands leads to anisotropic coordination in the formation of c-CPs. Consequently, we successfully achieve a single-crystalline three-dimensional (3D) c-CP Cu4DHTTB (DHTTB = 2,5-dihydroxy-1,3,4,6-tetrathiolbenzene), containing orthogonal ribbon-like pi-d conjugated chains rather than 2D conjugated layers. DFT calculation suggests that the resulting Cu4DHTTB exhibits a small band gap (similar to 0.2 eV), strongly dispersive energy bands near the Fermi level with a low electron-hole reduced effective mass (similar to 0.2m0*). Furthermore, the four-probe method reveals a semiconducting behavior with a decent conductivity of 0.2 S/cm. Thermopower measurement suggests that it is a p-type semiconductor. Ultrafast terahertz photoconductivity measurements confirm Cu4DHTTB's semiconducting nature and demonstrate the Drude-type transport with high charge carrier mobilities up to 88 +/- 15 cm2 V-1 s-1, outperforming the conductive 3D coordination polymers reported till date. This molecular design strategy for constructing high-mobility semiconducting c-CPs lays the foundation for achieving high-performance c-CP-based (opto-)electronics.
Quantum Octets in Air Stable High Mobility Two-Dimensional PdSe2

Yuxin Zhang,Haidong Tian,Huaixuan Li,Chiho Yoon,Ryan A. Nelson,Ziling Li,Kenji Watanabe,Takashi Taniguchi,Dmitry Smirnov,Roland Kawakami,Joshua E. Goldberger,Fan Zhang,Chun Ning Lau

2023-10-20

Abstract:Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large-scale synthesis. Here we demonstrate air-stable field-effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with record high saturation current >350{\mu}A/{\mu}m, and field effect mobilities 700 and 10,000 cm2/Vs at 300K and 2K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.

Materials Science
A New Two-Dimensional Functional Material with Desirable Bandgap and Ultrahigh Carrier Mobility

Ning Lu,Zhiwen Zhuo,Hongyan Guo,Ping Wu,Wei Fa,Xiaojun Wu,Xiao Cheng Zeng

DOI: https://doi.org/10.1021/acs.jpclett.8b00595

2018-03-01

Abstract:Two-dimensional (2D) semiconductors with direct and modest bandgap and ultrahigh carrier mobility are highly desired functional materials for nanoelectronic applications. Herein, we predict that monolayer CaP3 is a new 2D functional material that possesses not only a direct bandgap of 1.15 eV (based on HSE06 computation), and also a very high electron mobility up to 19930 cm2 V-1 s-1, comparable to that of monolayer phosphorene. More remarkably, contrary to the bilayer phosphorene which possesses dramatically reduced carrier mobility compared to its monolayer counterpart, CaP3 bilayer possesses even higher electron mobility (22380 cm2 V-1 s-1) than its monolayer counterpart. The bandgap of 2D CaP3 can be tuned over a wide range from 1.15 to 0.37 eV (HSE06 values) through controlling the number of stacked CaP3 layers. Besides novel electronic properties, 2D CaP3 also exhibits optical absorption over the entire visible-light range. The combined novel electronic, charge mobility, and optical properties render 2D CaP3 an exciting functional material for future nanoelectronic and optoelectronic applications.

Materials Science
High-throughput screening of 2D materials identifies p -type monolayer WS 2 as potential ultra-high mobility semiconductor

Viet-Anh Ha,Feliciano Giustino

DOI: https://doi.org/10.1038/s41524-024-01417-0

IF: 12.256

2024-09-30

npj Computational Materials

Abstract:2D semiconductors offer a promising pathway to replace silicon in next-generation electronics. Among their many advantages, 2D materials possess atomically-sharp surfaces and enable scaling the channel thickness down to the monolayer limit. However, these materials exhibit comparatively lower charge carrier mobility and higher contact resistance than 3D semiconductors, making it challenging to realize high-performance devices at scale. In this work, we search for high-mobility 2D materials by combining a high-throughput screening strategy with state-of-the-art calculations based on the ab initio Boltzmann transport equation. Our analysis singles out a known transition metal dichalcogenide, monolayer WS 2 , as the most promising 2D semiconductor, with the potential to reach ultra-high room-temperature hole mobilities in excess of 1300 cm 2 /Vs should Ohmic contacts and low defect densities be achieved. Our work also highlights the importance of performing full-blown ab initio transport calculations to achieve predictive accuracy, including spin–orbital couplings, quasiparticle corrections, dipole and quadrupole long-range electron–phonon interactions, as well as scattering by point defects and extended defects.

materials science, multidisciplinary,chemistry, physical
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Song-Lin Li,Kazihito Tsukagoshi,Emanuele Orgiu,Paolo Samorì

DOI: https://doi.org/10.48550/arXiv.1602.03116

2016-02-09

Mesoscale and Nanoscale Physics

Abstract:Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of \textit{ad-hoc} molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light onto the theoretical and experimental works, we provide a guide for improving the electronic performance of the 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics.
2D Materials: Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition (adv. Mater. 19/2020)

Yiyi Gu,Hui Cai,Jichen Dong,Yiling Yu,Anna N. Hoffman,Chenze Liu,Akinola D. Oyedele,Yu‐Chuan Lin,Zhuozhi Ge,Alexander A. Puretzky,Gerd Duscher,Matthew F. Chisholm,Philip D. Rack,Christopher M. Rouleau,Zheng Gai,Xiangmin Meng,Feng Ding,David B. Geohegan,Kai Xiao

DOI: https://doi.org/10.1002/adma.202070152

IF: 29.4

2020-01-01

Advanced Materials

Abstract:In article number 1906238, Kai Xiao and co-workers develop a novel chemical vapor deposition method to successfully synthesize a pentagonal 2D material, PdSe2, which exhibits strong optical anisotropy and high carrier mobility. The growth of high-quality, anisotropic 2D crystals is essential for the rapid exploration and development of electronic devices with unique optoelectronic properties.
Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene

Yangyang Wang,Pu Huang,Meng Ye,Ruge Quhe,Yuanyuan Pan,Han Zhang,Hong-xia Zhong,Junjie Shi,Jing Lu

DOI: https://doi.org/10.1021/acs.chemmater.6b04909

IF: 10.508

2017-01-01

Chemistry of Materials

Abstract:Two-dimensional (2D) semiconductors are very promising channel materials in next-generation field effect transistors (FETs) due to the enhanced gate electrostatics and smooth surface. Two new 2D materials, arsenene and antimonene (As and Sb analogues of graphene), have been fabricated very recently. Here, we provide the first investigation of the many-body effect, carrier mobility, and device performance of monolayer (ML) hexagonal arsenene and antimonene based on accurate ab initio methods. The quasi-particle band gaps of ML arsenene and antimonene by using the GW approximation are 2.47 and 2.38 eV, respectively. The optical band gaps of ML arsenene and antimonene from the GW-Bethe Salpeter equation are 1.6 and 1.5 eV, with exciton binding energies of 0.9 and 0.8 eV, respectively. The carrier mobility is found to be considerably low in ML arsenene (21/66 cm(2)/V center dot s for electron/hole) and moderate in ML antimonene (150/510 cm(2)/V center dot s for electron/hole). In terms of the ab initio quantum transport simulations, the optimized sub-10 nm arsenene and antimonene FETs can satisfy both the low power and high performance requirements in the International Technology Roadmap for Semiconductors in the next decade. Together with the observed high stability under ambient condition, ML arsenene and antimonene are very attractive for nanoscale optoelectronic and electronic devices.

Atomically Thin Semiconducting Penta-Pdp2 and PdAs2 with Ultrahigh Carrier Mobility

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Electronic, Elastic, Optical and Thermal Transport Properties of Penta-Pdas2 Monolayer: First-principles Study

Two-Dimensional Pentagonal Materials with Parabolic Dispersion and High Carrier Mobility

Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Ultrahigh carrier mobility and light-harvesting performance of 2D penta-PdX2 monolayer

Carbon Phosphide Monolayer with Superior Carrier Mobility

Penta-Pt2N4: an Ideal Two-Dimensional Material for Nanoelectronics.

Discovering and Understanding 2D Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Quantum octets in high mobility pentagonal two-dimensional PdSe 2

Penta-CN2 revisited: Superior stability, synthesis condition exploration, negative Poisson's ratio and quasi-flat bands

MatHub-2d: A database for transport in 2D materials and a demonstration of high-throughput computational screening for high-mobility 2D semiconducting materials

Exceptionally high charge mobility in phthalocyanine-based poly(benzimidazobenzophenanthroline)-ladder-type two-dimensional conjugated polymers

Hydrogenated PtP2 Monolayer: Theoretical Predictions on the Structure and Charge Carrier Mobility

Semiconducting Conjugated Coordination Polymer with High Charge Mobility Enabled by "4 + 2" Phenyl Ligands.

Quantum Octets in Air Stable High Mobility Two-Dimensional PdSe2

A New Two-Dimensional Functional Material with Desirable Bandgap and Ultrahigh Carrier Mobility

High-throughput screening of 2D materials identifies p -type monolayer WS 2 as potential ultra-high mobility semiconductor

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

2D Materials: Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition (adv. Mater. 19/2020)

Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene