Abstract:To achieve efficient polymer solar cells (PSCs), it is important to increase the optical absorption coefficient and charge mobility of photovoltaic materials for obtaining a high short-circuit current density (J(sc)) and fill factor (FF) in the devices without sacrificing the open-circuit voltage (V-oc). Herein, we designed and synthesized two novel narrow bandgap n-type organic semiconductor (n-OS) acceptors named POIT-M and MOIT-M by modifying the side-chains of IT-M from para-hexylphenyl to para-hexyloxylphenyl and then to meta-hexyloxylphenyl. Due to the synergistic effects of introducing oxygen atoms and varying substitution positions on the phenyl side-chains, MOIT-M shows a significantly improved absorption coefficient, stronger intermolecular pi-pi stacking interaction, increased crystallinity and higher electron mobility in comparison with IT-M and POIT-M, which helps to gain higher J(sc) and FF in PSCs. These special features combined with the complementary absorption of the MOIT-M acceptor and wide bandgap polymer PTZ1 donor resulted in a high power conversion efficiency (PCE) of 11.6% with a V-oc of 0.96 V, a J(sc) of 17.5 mA cm(-2) and a FF of 68.8% for the PSCs processed with simple thermal annealing at 120 degrees C for 10 min, which is one of the highest PCEs reported for additive-free PSCs and significantly higher than those of the PSCs based on PTZ1: IT-M (9.1%) or PTZ1: POIT-M (9.7%). Our results indicate that side-chain engineering is an effective way to further improve the photovoltaic performance of n-OS acceptors in PSCs.

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