Abstract:Two-dimensional (2D) atomic-layered heterostructures stacked by van der Waals interactions recently introduced new research fields, which revealed novel phenomena and provided promising applications for electronic, optical, and optoelectronic devices. In this study, we report the van der Waals epitaxial growth of high-quality atomically thin Bi2Se3 on single crystalline hexagonal boron nitride (h-BN) by chemical vapor deposition. Although the in-plane lattice mismatch between Bi2Se3 and h-BN is approximately 65%, our transmission electron microscopy analysis revealed that Bi2Se3 single crystals epitaxially grew on h-BN with two commensurate states; that is, the (1̅21̅0) plane of Bi2Se3 was preferably parallel to the (1̅100) or (1̅21̅0) plane of h-BN. In the case of the Bi2Se3 (2̅110) ∥ h-BN (11̅00) state, the Moiré pattern wavelength in the Bi2Se3/h-BN superlattice can reach 5.47 nm. These naturally formed thin crystals facilitated the direct assembly of h-BN/Bi2Se3/h-BN sandwiched heterostructures without introducing any impurity at the interfaces for electronic property characterization. Our quantum capacitance (QC) measurements showed a compelling phenomenon of thickness-dependent topological phase transition, which was attributed to the coupling effects of two surface states from Dirac Fermions at/or above six quintuple layers (QLs) to gapped Dirac Fermions below six QLs. Moreover, in ultrathin Bi2Se3 (e.g., 3 QLs), we observed the midgap states induced by intrinsic defects at cryogenic temperatures. Our results demonstrated that QC measurements based on h-BN/Bi2Se3/h-BN sandwiched structures provided rich information regarding the density of states of Bi2Se3, such as quantum well states and Landau quantization. Our approach in fabricating h-BN/Bi2Se3/h-BN sandwiched device structures through the combination of bottom-up growth and top-down dry transferring techniques can be extended to other two-dimensional layered heterostructures.

Epitaxial Growth Of Single-Layer Niobium Selenides With Controlled Stoichiometric Phases

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Mass Production of Graphene-Like Single-Crystalline Nbse2 (004) Nanosheets Via Intercalant-Assisted Thermal Cleavage

Molecular beam epitaxy growth of monolayer niobium diselenide flakes

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Molecular Beam Epitaxy of lithium niobium oxide multifunctional materials

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

Van Der Waals Epitaxial Growth of Atomically Thin Bi2se3 and Thickness-Dependent Topological Phase Transition

Edge‐Epitaxial Growth of 2D NbS2‐WS2 Lateral Metal‐Semiconductor Heterostructures

Buffer-layer-controlled Nickeline vs Zinc-Blende/Wurtzite-type MnTe growths on c-plane Al2O3 substrates

Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals

Superconductivity And Magnetotransport Of Single-Crystalline Nbse2 Nanoplates Grown By Chemical Vapour Deposition

Epitaxial Growth of Single‐Phase 1t'‐wse2 Monolayer with Assistance of Enhanced Interface Interaction

Epitaxial Growth of Single‐Phase 1T'‐WSe 2 Monolayer with Assistance of Enhanced Interface Interaction

Growth of centimeter scale Nb1−xWxSe2 monolayer film by promoter assisted liquid phase chemical vapor deposition

Buffer-layer-controlled nickeline vs zinc-blende/wurtzite-type MnTe growths on -plane substrates

Niobium doping induced mirror twin boundaries in MBE grown WSe2 monolayers

Growth, stabilization and conversion of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy