High-performance Phototransistor Based on Individual High Electron Mobility MnWO4 Nanoplate

Xinglai Zhang,Yanan Jiang,Baodan Liu,Wenjin Yang,Jing Li,Pingjuan Niu,Xin Jiang
DOI: https://doi.org/10.1016/j.jallcom.2018.05.190
IF: 6.2
2018-01-01
Journal of Alloys and Compounds
Abstract:MnWO4 nano-materials have been attracting intensive attention as a potential candidate for modern electronic and optoelectronic nanodevices. However, the availability of highly crystalline MnWO4 nanostructures with controllable geometry shapes still remains a great challenge and further hinders their technologically important applications in optoelectronic devices. Herein, large yield and crystalline MnWO4 nanoplates with regular crystal facets are synthesized on Ti substrate based on a conventional plasma electrolytic oxidation (PEO) process followed by a thermal annealing method. The phototransistor based on individual high electron mobility MnWO4 nanoplate has been fabricated and it shows a classical n-type semiconductor behavior with superior field emission transistor (FET) properties including a very low threshold voltage of 1 V and a high peak transconductance of 2.7 mu S. Furthermore, the MnWO4 phototransistor also exhibits fast photoresponse time and high photoresponsivity under light illumination. All these unique characteristics of incident-light control and gate regulation from the MnWO4 nanoplate are expected to further promote its potential applications in multifunctional optoelectronic devices in the future. (C) 2018 Elsevier B.V. All rights reserved.
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