Reversible and Nonvolatile Ferroelectric Control of Two-Dimensional Electronic Transport Properties of ZrCuSiAs-type Copper Oxyselenide Thin Films with a Layered Structure

Xu-Wen Zhao,Guan-Yin Gao,Jian-Min Yan,Lei Chen,Meng Xu,Wei-Yao Zhao,Zhi-Xue Xu,Lei Guo,Yu-Kuai Liu,Xiao-Guang Li,Yu Wang,Ren-Kui Zheng
DOI: https://doi.org/10.1103/physrevmaterials.2.055003
IF: 3.98
2018-01-01
Physical Review Materials
Abstract:Copper-based ZrCuSiAs-type compounds of LnCuChO (Ln = Bi and lanthanides, Ch = S, Se, Te) with a layered crystal structure continuously attract worldwide attention in recent years. Although their high-temperature (T >= 300 K) electrical properties have been intensively studied, their low-temperature electronic transport properties are little known. In this paper, we report the integration of ZrCuSiAs--type copper oxyselenide thin films of Bi-0. 94Pb(0.) CuSeO (BPCSO) with perovskite--type ferroelectric Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) single crystals in the form of ferroelectric field effect devices that allow us to control the electronic properties (e.g., carrier density, magnetoconductance, dephasing length, etc.) of BPCSO films in a reversible and nonvolatile manner by polarization switching at room temperature. Combining ferroelectric gating and magnetotransport measurements with the Hikami--Larkin--Nagaoka theory, we demonstrate two--dimensional (2D) electronic transport characteristics and weak antilocalization effect as well as strong carrier-density-mediated competition between weak antilocalization and weak localization in BPCSO films. Our results show that ferroelectric gating using PMN-PT provides an effective and convenient approach to probe the carrier--density--related 2D electronic transport properties of ZrCuSiAs--type copper oxyselenide thin films.
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