Abstract:Graphene—atomically thin carbon sheets with a two-dimensional hexagonal lattice structure—exhibits unusual electronic and optical properties. Photodetectors are a good prospective application of graphene because they should ideally exhibit a broadband photoresponse from the ultraviolet to terahertz regions and high-speed operation, as well as be inexpensive to produce. Numerous methods have been proposed in order to enhance the responsivity of graphene-based photodetectors. Among these methods, photogating is most promising because it can realize the highest performance. Photogating requires photosensitive layers at the vicinity of graphene in order to produce a voltage change. Various photosensitive layers, including quantum dots, Si, InSb, and LiNbO3, are used in the visible to near-, mid-, and long-wavelength IR (NIR, MWIR, and LWIR) regions, respectively. However, the operating wavelength region is determined by the photosensitive layer, which undermines the advantage of broadband operation of the graphene. In this work, graphene nanoribbon (GNR) was used as a photosensitive layer. Graphene transistors were prepared using Si substrates with a SiO2 layer and source and drain electrodes. Single-layer graphene fabricated by chemical vapor deposition was transferred onto this substrate and formed a channel, and GNR was formed on the graphene channel using a solution dispersion method. The photoresponse was measured in the mid- and long-wavelength infrared regions. The photoresponse was found to be enhanced by GNR photogating compared with the photoresponse of devices without GNR. These results are expected to contribute to the development of high-performance broadband IR photodetectors.

Anomalous Temperature Coefficient of Resistance in Graphene Nanowalls/polymer Films and Applications in Infrared Photodetectors

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Direct Growth of Graphene Nanowalls on Silicon Using Plasma-Enhanced Atomic Layer Deposition for High-Performance Si-Based Infrared Photodetectors

Graphene Plasmonic Nanoresonators/graphene Heterostructures for Efficient Room-Temperature Infrared Photodetection

High-responsivity Graphene/inas Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/off Ratios.

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Synergistic-potential Engineering Enables High-Efficiency Graphene Photodetectors for Near- to Mid-Infrared Light

High-Quality Infrared Imaging with Graphene Photodetectors at Room Temperature

High-responsivity Photodetectors Made of Graphene Nanowalls Grown on Si

Graphene nanoribbon photogating for graphene-based infrared photodetectors

Graphene-based Polarization-Sensitive Longwave Infrared Photodetector

Mid‐Wave Infrared Polarization‐Independent Graphene Photoconductor with Integrated Plasmonic Nanoantennas Operating at Room Temperature

Sensitive Photodetectors Based on Carbon Nanotube/graphene Films

Schottky Barrier Height Modification of Graphene/Ge by Al2O3 Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared Photodetectors

Planar Carbon Nanotube-Graphene Hybrid Films For High-Performance Broadband Photodetectors

Graphene Quantum Dot-Decorated Vertically Oriented Graphene/Germanium Heterojunctions for Near-Infrared Photodetectors

Doping and Transfer of High Mobility Graphene Bilayers for Room Temperature Mid-Wave Infrared Photodetectors

Superionic Modulation of Polymethylmethacrylate-Assisted Suspended Few-Layer Graphene Nanocomposites for High-Performance Photodetectors.

Graphene photodetectors with ultra-broadband and high responsivity at room temperature

Graphene-based, mid-infrared, room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

Three-Dimensional Graphene Field-Effect Transistors As High-Performance Photodetectors.