Low-temperature grapho-epitaxial La-substituted BiFeO3 on metallic perovskite
Sajid Husain,Isaac Harris,Guanhui Gao,Xinyan Li,Peter Meisenheimer,Chuqiao Shi,Pravin Kavle,Chi Hun Choi,Tae Yeon Kim,Deokyoung Kang,Piush Behera,Didier Perrodin,Hua Guo,James M. Tour,Yimo Han,Lane W. Martin,Zhi Yao,Ramamoorthy Ramesh
DOI: https://doi.org/10.1038/s41467-024-44728-y
IF: 16.6
2024-01-11
Nature Communications
Abstract:Abstract Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO 3 thin films have typically been deposited at relatively high temperatures (650–800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO 3 at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb 0.75 Bi 0.25 O 3 electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO 3 , BaPb 0.75 Bi 0.25 O 3 , and SrTiO 3 (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO 3 . Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO 3 , where SrRuO 3 typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.
multidisciplinary sciences