Oxygen-vacancy-related Dielectric Relaxation Behaviours and Impedance Spectroscopy of Bi(Mg1/2Ti1/2)O3 Modified BaTiO3 Ferroelectric Ceramics

Ming-Ding Li,Xin-Gui Tang,Si-Ming Zeng,Yan-Ping Jiang,Qiu-Xiang Liu,Tian-Fu Zhang,Wen-Hua Li
DOI: https://doi.org/10.1016/j.jmat.2018.03.001
IF: 8.589
2018-01-01
Journal of Materiomics
Abstract:Lead-free ferroelectric ceramics (1-x) BaTiO3-xBi(Mg1/2Ti1/2 )O-3 (x = 0.0-0.07) were synthesized by conventional solid state reaction method and the correlation of structure, dielectric, ferroelectric and impedance properties were investigated. It was found that T m and Em showed decreasing trend with the increase of BMT content. The high-temperature dielectric relaxation behaviour was observed in all the samples. The activation energy calculated from impedance (E-a) and conductivity (E-cond), which revealed that the relaxation behaviours were linked with the migration of OVs. The values of E-a were almost equivalent to E-cond. It was concluded that the short-range hopping of oxygen vacancy contributed to the dielectric relaxation and long-distance movement of doubly ionized oxygen vacancies contributed to the conduction. On the other hand, with increasing BMT contents, it was found that P-E loops became slimmer and slimmer, which indicated the increase of relaxor behaviour. The temperature dependence of P-E loops for 0.98BT-0.02BMT ceramic clearly showed the transition process from ferroelectric to relaxed ferroelectrics. (C) 2018 The Chinese Ceramic Society. Production and hosting by Elsevier B.V.
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