Fabrication of Lead Selenide Thin Film Photodiode for Near-Infrared Detection Via O2-plasma Treatment

Y. X. Ren,T. J. Dai,W. B. Luo,X. Z. Liu
DOI: https://doi.org/10.1016/j.jallcom.2018.03.227
IF: 6.2
2018-01-01
Journal of Alloys and Compounds
Abstract:By creating acceptor states in band gap of lead selenide (PbSe), oxygen can act as an effective p-type dopant and eventually invert the conductivity from n-type to p-type. Fabrication of PbSe Photodiode was thus realized by introducing oxygen atoms into PbSe thin films via O-2-plasma in our research. Typical diode characteristics and splendid photosensitivity was achieved in the as-fabricated PbSe photodiode. The detectivity was determined as 1.2 x 10(11) cm Hz(1/2)/W, 1.2 x 10(11) cm Hz(1/2)/W and 2.2 x 10(10) cm Hz(1/)2/W at forward bias, reverse bias and zero bias, respectively. With a response time of millisecond level, great dynamic performance was achieved via this novel fabrication process. Dimension of oxygen-doped region as well as material properties were also characterized in this research. (C) 2018 Published by Elsevier B.V.
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