Abstract:This work presents a high‐performance PtSe2/InP Schottky junction self‐powered NIR photodetector with an ultralow dark current of 45 pA. The responsivity and detectivity under NIR illumination reach up to 0.718 A W−1 and 4.37 × 1012 Jones, respectively. Theoretical simulations reveal the electric field distribution at the device interface and its photoresponse mechanism. Self‐powered near‐infrared (NIR) photodetectors utilizing low‐dimensional materials are promising owing to their low‐power‐consumption and superior photoresponse performance. The strong light‐matter interaction and other intriguing physical mechanisms (such as high mobility, dangling‐bond‐free surface) in 2D semiconductor materials, combined with the flexible fabrication of device structures, create new opportunities for the optoelectronic devices. Here, a self‐powered NIR Schottky junction photodetector is demonstrated by vertically stacking 2D PtSe2 film atop an InP wafer. The strong built‐in electric field formed at PtSe2/InP interface endows the device with self‐powered operation with an ultralow dark current of 45 pA at room temperature under 0 V bias. The responsivity and detectivity at 940 nm illumination reach up to 0.718 A W−1 and 4.37 × 1012 Jones, respectively. Furthermore, TCAD simulations showed that the significant electric field at the PtSe2/InP interface is pivotal for its superior self‐powered detection performance. Remarkably, the device achieves a high Ilight/Idark ratio exceeding 105 and a fast response time of 4.35/5.66 μs, and sensitivity to NIR light polarization. This study provides a new perspective for the integration of hybrid 2D materials with 3D semiconductors in the next‐generation optoelectronic devices and integrated systems.

Effect of N 2 /I 2 atmosphere annealing sensitization on PbSe-based photodetector for NIR photodetection

Effect of Air Atmosphere Sensitization on Formation of PbSe p–n Junctions for High-Performance Photodetectors

Ultrafast visible-infrared photodetector based on the SnSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructure

Promoted Mid-Infrared Photodetection of PbSe Film by Iodine Sensitization Based on Chemical Bath Deposition

High Sensitive and Broadband Photodetectors Based on Hybrid PbI2 Nanosheet/CdSe Nanobelt

Boosting Photoresponse of Self-Powered InSe-Based Photoelectrochemical Photodetectors via Suppression of Interface Doping

Characterizations of a-Se based photodetectors using X-ray photoelectron spectroscopy and Raman spectroscopy

Synergetic Enhancement of CsPbI3 Nanorods-based High-Performance Photodetectors via PbSe Quantum Dot Interface Engineering

PbSe Quantum Dots Sensitized High-Mobility Bi2O2Se Nanosheets for High-Performance and Broadband Photodetection Beyond 2 Micrometers.

Liquid iodine sensitization for enhanced mid-infrared detection of lead selenide films

Photoconductive Focal Plane Arrays Infrared Detector Based on PbSe

Stability enhancement of PbSe quantum dots via post-synthetic ammonium chloride treatment for a high-performance infrared photodetector

Infrared Photodiode Based on Colloidal PbSe Nanocrystal Quantum Dots

Fabrication Of Pdse2/Gaas Heterojunction For Sensitive Near-Infrared Photovoltaic Detector And Image Sensor Application

High-performance Near-Infrared PtSe 2 /N-Ge Heterojunction Photodetector with Ultrathin Al 2 O 3 Passivation Interlayer

Electrochemical synthesis of hierarchical porous PbSe film and its infrared photodetection properties

PtSe2/InP Mixed‐Dimensional Schottky Junction for High‐Performance Self‐Powered Near‐Infrared Photodetection

Enhanced performance of near-infrared- photodetector with PbS-QD-sensitised field-effect transistor

Advancing photodetection capabilities via Pb-induced modifications in SnSe crystals

Synergic effect of N and Se facilitates photoelectric performance of co-hyperdoped silicon

PbSe Nanocrystals Produced by Facile Liquid Phase Exfoliation for Efficient UV–Vis Photodetectors