Tuning the Electro‐Optic Properties of BaTiO3 Epitaxial Thin Films Via Buffer Layer‐Controlled Polarization Rotation Paths
Han Yu,Ning Guo,Chenguang Deng,Haojie Han,Wei Li,Collieus Lebudi,Sixu Wang,Yuhan Li,Yongjin Chen,Shang Peng,Jinxing Zhang,Jing Ma,Qiang Zheng,Jing-Feng Li,Qian Li
DOI: https://doi.org/10.1002/adfm.202315579
IF: 19
2024-01-01
Advanced Functional Materials
Abstract:BaTiO3 thin films emerge as a highly promising material platform for integrated photonics due to their outstanding electro-optic properties and diverse functionalities. Despite extensive studies, there remains a notable gap in the understanding of the intricate relationship between the phase structure, domain switching kinetics and electro-optic performance of these materials. By controlling the structural phase evolution, it is possible to gain deep insights into the physical mechanisms underlying the electro-optic performance. Here, the phase constitution of BaTiO3 epitaxial thin films is successfully tuned by the insertion of a GdScO3 buffer layer. Continuous polarization rotation paths are observed from an out-of-plane tetragonal-like phase, to an intermediate rhombohedral-like phase, and finally an in-plane tetragonal-like phase, achieving an enhanced effective electro-optic coefficient of 175 pm V-1 compared to unbuffered films. Furthermore, by in situ second harmonic generation microscopy and electro-optic measurements, the domain switching behaviors in both statistical and spatially resolved manners are examined, resulting in a clear delineation of the key domain nucleation processes. The in-depth explorations of these structural mechanisms and kinetics inform the rational design of strong electro-optic thin films and help in the realization of high-performance integrated photonic devices such as electro-optic modulators and multilevel phase shifters.