Superior electronic structure of two-dimensional 3d transition metal dicarbides for applications in spintronics

Baozeng Zhou,Xiaocha Wang,Wenbo Mi
DOI: https://doi.org/10.1039/c7tc05383e
IF: 6.4
2018-01-01
Journal of Materials Chemistry C
Abstract:The past decade has been particularly creative for spintronics since the discovery of various two-dimensional (2D) materials. However, their applications in spintronics have been limited due to the lack of intrinsic magnetism. Herein, we predict a new type of 2D transition metal dicarbides with great potential in spintronics due to the itinerant magnetism of the d orbital. It was observed that in ScC2, TiC2, CuC2 and ZnC2, no magnetism was observed. VC2, MnC2 and NiC2 are magnetic metals, and FeC2 and CoC2 are spin-polarized magnetic semiconductors. Interestingly, CrC2 is half-metallic. The large gap opening of about 15 meV in CrC2 induced by SOC is related to the p-d hybridization between the C-2 dimer and Cr. The chiral edge states and Chern number results suggest that the SOC gap is topologically trivial. The uniaxial compressive strain along the y-axis can induce a transition from half-metal to magnetic semiconductor, spin gapless semiconductor and metal in monolayer CrC2. A CrC2-based field-effect transistor on a flexible substrate is proposed with the aim of realizing electrical control on the SOC-induced insulating state and on the carriers' spin orientation. Our findings provide a new scheme for future multifunctional 2D nanoelectronics and spintronics devices.
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