Abstract:The aim of this study is to investigate the effects of various process parameters (the grinding-wheel speed, feed rate, workpiece speed, spark-out grinding time, and grinding-wheel granularity) on the surface quality of single-crystal SiC during nanogrinding while concurrently analysing the grinding mechanism and optimising the overall process. Experiments are performed to investigate the macrotexture and micromorphology of the single-crystal SiC surface. By employing image-processing technology, the proportion of brittle and plastic removal components is determined, thus facilitating a comprehensive analysis into the removal mechanism and the subsequent establishment of a material-removal model. The findings indicate that after grinding, the surface of single-crystal SiC exhibits a distinct grinding trajectory that radiates outwards from the centre, the density of the grinding trajectory is higher in the central area than at the periphery. The overall surface roughness increases from the centre to the edge. As the grinding-wheel speed increases, the feed rate decreases, the spark-out grinding time is prolonged, the grinding-wheel granularity increases, the abrasive cutting depth of the diamond grinding wheel decreases, the proportion of brittle removal on the surface of single-crystal SiC decreases, the proportion of plastic removal increases, the grinding groove becomes shallow, and the density of the groove increases significantly. Under the optimal process parameters, the surface roughness is reduced to 5.35 nm, and the smooth mirror effect is achieved via grinding.

Experimental Investigations on Nanogrinding of RB-SiC Wafers

Studies on the Surface Quality of the Unsteady-State Grinding Technique

Impact of Material Microstructure and Diamond Grit Wear on Surface Finish in Micro-Grinding of RB-SiC/Si and WC/Co Carbides

Enhancing the grinding performance of RB-SiC ceramic using abrasive water jet dressed diamond grinding wheels

Material removal characteristics of ultra-precision grinding silicon carbide ceramics

Grinding Force of RB-SiC in Ultrasonic Assisted Grinding with Sintered Diamond Grinding Wheel

Mechanism analysis and process optimization of nanogrinding single-crystal SiC

Nanogrinding of SiC Wafers with High Flatness and Low Subsurface Damage

Grinding Characteristics of Reaction Bonded Silicon Carbide

Optimizing of Grinding Parameters and Research of Grinding Mechanism of Reaction-bond Silicon Carbon

Ductile Mode Grinding of Reaction-Bonded Silicon Carbide Mirrors

Machining Characteristics And Removal Mechanisms Of Reaction Bonded Silicon Carbide

Analysis of Diamond Wheel Wear and Surface Integrity in Laser-Assisted Grinding of RB-SiC Ceramics

Experimental Investigation on Materials Removal Mechanism During Grinding Silicon Carbide Ceramics with Single Diamond Grain

Experimental investigation on the feasibility of high-efficiency and precision grinding of silicon carbide ceramics with monolayer brazed diamond wheel

An Experimental Investigation on Ultrasonic Vibration-Assisted Grinding of SiO2f/SiO2Composites

Experimental Investigation on the Surface and Subsurface Damages Characteristics and Formation Mechanisms in Ultra-Precision Grinding of SiC

The study of the resin-bond diamond wheel for IC silicon wafer nanoscale roughness back grinding

Experimental Investigation of Damage Formation and Material Removal in Ultrasonic Assisted Grinding of RBSiC

Surface/subsurface Observation and Removal Mechanisms of Ground Reaction Bonded Silicon Carbide

Laser-assisted Grinding of Reaction-Bonded SiC