Intrinsic electron injection model for linear 2D materials: Full quantum Monte Carlo time-dependent simulation of graphene devices
Zhen Zhan,Xueheng Kuang,Enrique Colomés,Devashish Pandey,Shengjun Yuan,X. Oriols
2018-01-01
Abstract:The simulation of electron devices implies a partition between an open system (active region) and its environment (reservoirs), where the condition at boundaries are fixed by local and non-local arguments based on statistical mechanics. For time-dependent simulations, such boundary conditions, usually referred to as electron injection model, determine how and when electrons are injected from the reservoirs into the active region. In this paper, an intrinsic electron injection model for linear band two-dimensional materials, like graphene, is presented for full (DC, AC, transient and noise) quantum simulations. We demonstrate that the injection of electrons with positive and negative kinetic energies is mandatory when investigating high frequency performance of linear band materials with Klein tunneling, while traditional models dealing with holes (defined as the lack of electrons) can lead to unphysical results. We show that the number of injected electrons is bias-dependent, implying that an extra charge is required to get self-consistent results. The implementation of the present injection model into the BITLLES simulator gives a quantum Monte Carlo time-dependent algorithm where each electron is defined as a bispinor solution of a (conditional) Dirac equation. A successful comparison with experimental DC results is reported and a genuine high-frequency signature, due to a roughly constant electron injection rate, is predicted.