Abstract:Random networks of single-walled carbon nanotubes (SWCNTs) were have been grown by chemical vapor deposition on silicon wafers and used for fabricating field-effect transistors (FETs) using symmetric Pd contacts and diodes using asymmetrical Pd and Sc contacts. For a short channel FET or diode with a channel length of about 1 μm or less, the device works in the direct transport regime, while for a longer channel device the transport mechanism changes to percolation. Detailed electronic and photovoltaic (PV) characterizations of these carbon nanotube (CNT) thin-film devices was carried out. While as-fabricated FETs exhibited typical p -type transfer characteristics, with a large current ON/OFF ratio of more than 10 4 when metallic CNTs were removed via a controlled breakdown, it was found that the threshold voltage for the devices was typically very large, of the order of about 10 V. This situation was greatly improved when the device was coated with a passivation layer of 12 nm HfO 2 , which effectively moved the threshold voltages of both FET and diode back to center around zero or turned these device to their OFF states when no bias was applied on the gate. PV measurements were then made on the short channel diodes under infrared laser illumination. It was shown that under an illumination power density of 1.5 kW/cm 2 , the device resulted in an open circuit voltage V OC = 0.21 V and a short circuit current I SC = 3.74 nA. Furthermore, we compared PV characteristics of CNT film diodes with different channel lengths, and found that the power transform efficiency decreased significantly when the device changed from the direct transport to the percolation regime.

Photoelectric Characteristics of Self-Assembled Semiconducting Carbon Nanotube Thin Films

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Fabrication and Electrical Properties of Printed Carbon Nanotube Thin Film Transistors (TFTs) Based on Self-made Carbon Nanotubes

Integration and Characterization of Transparent Thin Film Transistors with Carbon Nanotubes As Aligned Channel and Electrodes

Room Temperature Infrared Imaging Sensors Based on Highly Purified Semiconducting Carbon Nanotubes.

Carbon Nanotube Arrays Based High-Performance Infrared Photodetector [Invited]

High Performance Semiconducting Enriched Carbon Nanotube Thin Film Transistors Using Metallic Carbon Nanotube Electrode

Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics

Dip-Coating Self-Assembly Fabrication and Polarization Sensitive Photoresponse of Aligned Single-Walled Carbon Nanotube Film

Short Channel Carbon Nanotube Thin Film Transistors with High On/off Ratio Fabricated by Two-Step Fringing Field Dielectrophoresis

Carbon Nanotube Arrays on Flexible Substrate and Their Field Emission Characteristics

Low-voltage High-Performance Flexible Digital and Analog Circuits Based on Ultrahigh-Purity Semiconducting Carbon Nanotubes

Carbon nanotube photoelectronic and photovoltaic devices and their applications in infrared detection.

Tuning Threshold Voltage of Carbon Nanotube Thin Film Transistors by Channel Length Engineering

A novel thin-film transistor using carbon nanotubes as both channel and electrodes

Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.

Investigation and optimization of polarization properties of self-assembled carbon nanotube films

Fabrication of Thin-Film Transistor Based on Self-Assembled Single-Walled Carbon Nanotube Network

Photochlorination to prepare semiconducting single-walled carbon nanotube and its intramolecular junction

Highly sensitive SWIR photodetector using carbon nanotube thin film transistor gated by quantum dots heterojunction

Polarimetric Vis-NIR photodetector based on self-aligned single-walled carbon nanotubes