Abstract:Functional Materials Letters, Ahead of Print. BaTiO3/Nb:SrTiO3 thin film oxides have been deposited on SrTiO3 substrates using a pulsed laser deposition system. Different annealing methods were thereafter used to assess the ferroelectricity of the grown films. The residual polarization value, 2Pr, of 4.205 [math]C/cm2 and saturated residual polarization value, 2Pmax, of 15.484 [math]C/cm2 were obtained using in-situ annealing. After performing rapid thermal annealing (RTA) annealing, the residual polarization value rose to 4.676 [math]C/cm2 and the saturated residual polarization value rose to 18.723 [math]C/cm2. Furthermore, a comparison of results showed that the saturation test frequency of the in-situ annealing was 10 times higher than the saturation test frequency of the RTA. This could be explained by the fact that the secondary high-temperature annealing led to a decrease in the conductivity of the doped oxide and, thereby, a decrease in the effective electric field that was applied to both ends of the BTO (BaTiO3) film. Thus, a lower frequency was required to ensure a flip of all ferroelectric domains within the BTO film. By testing the fatigue frequency at 100 kHz, 10[math] stable cycles in both annealing methods and the results confirmed the good stability of the device performance. A linear fit analysis of the [math]–[math] curves showed under in-situ annealing the presence of both a bulk-limited current mechanism that was dominated by the space charge limited current (SCLC) and Pool–Frenkel (PF) mechanisms, and an interface-limited current that was dominated by the Fowler–Nordheim (FN) mechanism in the structure. After RTA annealing, the conducting mechanism is ohmic contact at low electric field and the SCLC mechanism at high field strength. The results show that after RTA annealing, the quality and ferroelectric properties of the films are significantly improved compared to those under in-situ annealing. These results showed that the BTO/NSTO/STO (BaTiO3/Nb:SrTiO3/SrTiO3) structure had a standard test frequency as well as reliable stability. The BTO/NSTO/STO structure showed, therefore, promising applications in future nonvolatile information memory devices.

Structural Phase Transition, Electrical and Photoluminescent Properties of Pr 3+ -Doped (1-X)na 0.5 Bi 0.5 TiO 3 -Xsrtio 3 Lead-Free Ferroelectric Thin Films

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Sol-gel Processing and Nanoscale Characterization of (Bi0.5na0.5)tio3-Srtio3 Lead-Free Piezoelectric Thin Films

Structural modification and piezoelectric properties in Bi 0.5 Na 0.5 TiO 3 –BaTiO 3 –SrTiO 3 thin films

Octahedral and polar phase transitions in freestanding films of SrTiO3

The effects of crystal orientation on the ferroelectric and optoelectronic properties of Pt/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3 heterostructures

Thickness-dependent Switching Behavior of 0.8(Bi0.5na0.5)tio3-0.2Srtio3 Lead-Free Piezoelectric Thin Films

Structure, Dielectric Behaviours, Enhanced Polarization Responses and Energy Storage Properties in (1 − X )srtio 3 – X Bi(Mg 1/2 Ti 1/2 )O 3 Ceramics

Normal-relaxor Ferroelectric Phase Transition Induced Morphotropic Phase Boundary Accompanied by Enhanced Piezoelectric and Electrostrain Properties in Strontium Modulated Bi0.5K0.5TiO3 Lead-Free Ceramics

Ferroelectric and piezoelectric properties of La-modified lead-free (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–SrTiO3 thin films

Phase Transition Behavior and Electrical Properties of (1 − X)bi0.5na0.5tio3–x(na0.53k0.44li0.04)(nb0.88sb0.08ta0.04)o3 Lead-Free Ceramics

Phase Diagrams and Electromechanical Strains in Lead‐Free BNT‐Based Ternary Perovskite Compounds

Structural evolution and ferroelectric properties in lead-free (1−x)(Bi0.5Na0.4K0.1)TiO3-xSrTiO3 solid solutions

Ferroelectric properties and current mechanisms of BaTiO[math]/Nb:SrTiO[math] thin films

Phase Structure of Epitaxial Pb(Zr,Ti)O-3 Thin Films on Nb-Doped Srtio3 Substrates

Macroscopic and Local Approaches of Phase Transition in Sol-Gel Synthesized (Bi0.5na0.5)tio3-Srtio3 Thin Films

Electrical properties and temperature stability of SrTiO 3 ‐modified (Bi 1/2 Na 1/2 )TiO 3 ‐BaTiO 3 ‐(K 1/2 Na 1/2 )NbO 3 piezoceramics

Unveiling the structural, chemical state, and optical band-gap evolution of Ta-doped epitaxial SrTiO3 thin films using first-principles calculations and spectroscopic ellipsometry

Composition dependence of phase structure and electrical properties of BiMnO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

Structural and optoelectronic properties of combining Nb-doped SrTiO3/ITO films on (0 0 1)-YSZ substrate

Large electric field-induced strain and excellent photoluminescence properties of Pr-modified 0.94Bi0.5Na0.5TiO3-0.06BaTiO3 lead-free ferroelectric ceramics