Abstract:Amorphous indium gallium zinc oxide (a-IGZO) has recently made significant advancement as a key material for electronic component design owing to its compatibility with complementary metal oxide semiconductor technologies. A comprehensive analysis of reliability-related issues is required to determine the true potential of a-IGZO-based devices for next-generation electronics applications. To address this objective, we electrically characterize scaled-channel a-IGZO thin film transistors (TFTs) under positive bias (temperature) stress (PB(T)S). Both PBS and PBTS are characterized by positive and negative Vth shift, respectively, during the various gate stresses. In particular, the negative Vth shift is explained by the generation of donor-like traps stimulated by ionization of oxygen vacancy/hydrogen at elevated temperature. The TFTs exhibit relatively decent stability during the PBS operation. The analysis of devices with variant channel dimensions implies that long-channel devices exhibit relatively higher stability and performance compared to the short-channel ones. We also observe that the Vth can be controllably adjusted by employing the top gate (TG) with bottom gate sweep. Moreover, the stress-induced partial recovery mechanism is experimentally observed owing to detrapping of charges. Generally, the reported results infer a perceptive understanding of scaled-channel a-IGZO-TFTs which helps with shaping performance-enhancement strategies.

Gate-Controlled electron injection in tunneling contact IGZO TFTs

Tunneling Contact Igzo Tfts With Reduced Saturation Voltages

Enhancing IGZO Thin Film Transistor Scalability Through Tunneling Contact

Tunneling phenomenon of amorphous indium-gallium-zinc-oxide thin film transistors for flexible display

Current Enhancement of Graphene-Inserted Tunneling Contact IGZO TFT

Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts

Analysis of the contact resistance in amorphous InGaZnO thin film transistors

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

A gate-stress-induced ΔVth model reflecting impact of electric field in IGZO thin film transistors

Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs

Temperature and Gate Bias Dependence of Carrier Transport Mechanisms in Amorphous Indium–gallium–zinc Oxide Thin Film Transistors

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

CHARACTERISTICS OF DOUBLE-GATE a-IGZO TFT

A Dual-Gate IGZO Source-Gated Transistor Based on Field Modulation by TCAD Simulation

High-Performance Schottky-Barrier IGZO Thin-Film Transistors Based on Ohmic/Schottky Hybrid Contacts

Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

The clarification of leakage conduction mechanism of HfO2/SiNx stacked a-IGZO TFT and its variation at high temperature

Temperature and gate voltage dependent electrical properties of graphene field-effect transistors

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses