Active Photonic Integrated Circuits Using Semiconductor Optical Amplifiers

Yiwei Xie,Leimeng Zhuang,Arthur James Lowery

DOI: https://doi.org/10.1109/cleopr.2017.8119052

2017-01-01

Abstract:Active photonic circuits use combinations of active semiconductor devices and passive elements to support many applications. We present four functions on a single active photonic integrated circuit (4.5 mm × 4 mm).

What problem does this paper attempt to address?

An Integrated Optical Circuit Architecture for Inverse-Designed Silicon Photonic Components

Richard Soref,Dusan Gostimirovic

DOI: https://doi.org/10.48550/arXiv.2211.09257

2022-11-17

Abstract:In this work, we demonstrate a compact toolkit of inverse-designed topologically optimized silicon-photonic devices that are arranged in a plug-and-play fashion to realize many different photonic integrated circuits, both passive and active, each with a small footprint. The silicon-on-insulator 1550-nm toolkit contains a 2x2 3dB splitter-combiner, a 2x2 waveguide crossover and a 2x2 all-forward add-drop resonator. The resonator can become a 2x2 electro-optical crossbar switch by means of the thermo-optical effect or phase-change cladding or free-carrier injection. For each of the ten circuits demonstrated in this work, the toolkit of photonic devices enables the compact circuit to achieve low insertion loss and low crosstalk. By adopting the sophisticated inverse-design approach, the design structure, shape, and sizing of each individual device can be made more flexible to better suit the architecture of the greater circuit. For a compact architecture, we present a unified, parallel waveguide circuit framework into which the devices are designed to fit seamlessly, thus enabling low-complexity circuit design.

Emerging Technologies,Optics
Multifunctional Mixed Analog/digital Signal Processor Based on Integrated Photonics

Yichen Wu,Qipeng Yang,Bitao Shen,Yuansheng Tao,Xuguang Zhang,Zihan Tao,Luwen Xing,Zhangfeng Ge,Tiantian Li,Bowen Bai,Haowen Shu,Xingjun Wang

DOI: https://doi.org/10.29026/oes.2024.240012

2024-01-01

Opto-Electronic Science

Abstract:Photonic signal processing offers a versatile and promising toolkit for contemporary scenarios ranging from digital optical communication to analog microwave operation. Compared to its electronic counterpart, it eliminates inherent bandwidth limitations and meanwhile exhibits the potential to provide unparalleled scalability and flexibility, particularly through integrated photonics. However, by far the on-chip solutions for optical signal processing are often tailored to specific tasks, which lacks versatility across diverse applications. Here, we propose a streamlined chip-level signal processing architecture that integrates different active and passive building blocks in silicon-on-insulator (SOI) platform with a compact and efficient manner. Comprehensive and in-depth analyses for the architecture are conducted at levels of device, system, and application. Accompanied by appropriate configuring schemes, the photonic circuitry supports loading and processing both analog and digital signals simultaneously. Three distinct tasks are facilitated with one single chip across several mainstream fields, spanning optical computing, microwave photonics, and optical communications. Notably, it has demonstrated competitive performance in functions like image processing, spectrum filtering, and electro-optical bandwidth equalization. Boasting high universality and a compact form factor, the proposed architecture is poised to be instrumental for next-generation functional fusion systems.
Photonic Integrated Circuits and Components Using Quantum Well Intermixing

JJ He,ES Koteles,PJ Poole,Y Feng,M Davis,S Charbonneau,RD Goldberg,LV Mitchell

DOI: https://doi.org/10.1117/12.253161

1996-01-01

Abstract:The monolithic integration of optical components with different functionalities on a single semiconductor wafer requires spatially selective control of bandgap energies. We have developed a simple, post-growth technique based on quantum well intermixing using ion implantation and rapid thermal annealing, which allows multiple selective area bandgap tailoring. Waveguide absorption spectra demonstrate that the bandgap energy can be shifted as much as 90 nm without any excess loss. By depositing a SiO2 layer of different thicknesses in different regions as the implantation mask, quantum wells in different sections of a wafer can be intermixed to different degrees in a single implantation and annealing process. It has also been shown that the heavy-hole and light hole states in the quantum wells can become degenerate at a certain degree of intermixing, which allows the fabrication of polarization insensitive optical amplifiers and electro-absorptive switches. The performance of both active (laser, amplifier, modulator) and passive (waveguide) components produced using this technique will be presented.
Development of Silicon Photonic Devices for Optical Interconnects

Xi Xiao,ZhiYong Li,Tao Chu,Hao Xu,XianYao Li,Anastasia Nemkova,Xiong Kang,YuDe Yu,JinZhong Yu

DOI: https://doi.org/10.1007/s11431-012-5120-2

2013-01-01

Science China Technological Sciences

Abstract:Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s −1 .
Substrate-blind Photonic Integration

Hongtao Lin,Lan Li,Yi Zou,Qingyang Du,Okechukwu Ogbuu,Juejun Hu,Charmayne Smith,Erick Koontz,Kathleen Richardson

DOI: https://doi.org/10.1364/iprsn.2015.it3a.1

2015-01-01

Abstract:Using high-index glasses as the backbone optical material, both passive and active photonic devices with record performance were successfully integrated on a wide variety of substrates including semiconductors, glasses, infrared crystals, polymers, and graphene.
Silicon Photonic Network-on-chip and Enabling Components

Ting Hu,Chen Qiu,Ping Yu,LongZhi Yang,WanJun Wang,XiaoQing Jiang,Mei Yang,Lei Zhang,JianYi Yang

DOI: https://doi.org/10.1007/s11431-012-5112-2

2013-01-01

Abstract:As the transistor’s feature scales down and the integration density of the monolithic circuit increases continuously,the traditional metal interconnects face significant performance limitation to meet the stringent demands of high-speed,low-power and low-latency data transmission for on-and off-chip communications.Optical technology is poised to resolve these problems.Due to the complementary metal-oxide-semiconductor（CMOS） compatible process,silicon photonics is the leading candidate technology.Silicon photonic devices and networks have been improved dramatically in recent years,with a notable increase in bandwidth from the megahertz to the multi-gigahertz regime in just over half a decade.This paper reviews the recent developments in silicon photonics for optical interconnects and summarizes the work of our laboratory in this research field.
Photonic-integrated circuits and components using quantum well intermixing

jian jun he,emil s koteles,p j poole,yan feng,michael j davis,n sylvain charbonneau,r d goldberg,i v mitchell

DOI: https://doi.org/10.1117/12.253161

1996-01-01

Abstract:The monolithic integration of optical components with different functionalities on a single semiconductor wafer requires spatially selective control of bandgap energies. We have developed a simple, post-growth technique based on quantum well intermixing using ion implantation and rapid thermal annealing, which allows multiple selective area bandgap tailoring. Waveguide absorption spectra demonstrate that the bandgap energy can be shifted as much as 90 nm without any excess loss. By depositing a SiO2 layer of different thicknesses in different regions as the implantation mask, quantum wells in different sections of a wafer can be intermixed to different degrees in a single implantation and annealing process. It has also been shown that the heavy-hole and light hole states in the quantum wells can become degenerate at a certain degree of intermixing, which allows the fabrication of polarization insensitive optical amplifiers and electro-absorptive switches. The performance of both active (laser, amplifier, modulator) and passive (waveguide) components produced using this technique will be presented.
Inorganic perovskite-based active multifunctional integrated photonic devices

Qi Han,Jun Wang,Shuangshuang Tian,Shen Hu,Xuefeng Wu,Rongxu Bai,Haibin Zhao,David W Zhang,Qingqing Sun,Li Ji

DOI: https://doi.org/10.1038/s41467-024-45565-9

2024-02-20

Abstract:The development of highly efficient active integrated photonic circuits is crucial for advancing information and computing science. Lead halide perovskite semiconductors, with their exceptional optoelectronic properties, offer a promising platform for such devices. In this study, active micro multifunctional photonic devices were fabricated on monocrystalline CsPbBr3 perovskite thin films using a top-down etching technique with focused ion beams. The etched microwire exhibited a high-quality micro laser that could serve as a light source for integrated devices, facilitating angle-dependent effective propagation between coupled perovskite-microwire waveguides. Employing this strategy, multiple perovskite-based active integrated photonic devices were realized for the first time. These devices included a micro beam splitter that coherently separated lasing signals, an X-coupler performing transfer matrix functions with two distinguishable light sources, and a Mach-Zehnder interferometer manipulating the splitting and coalescence of coherent light beams. These results provide a proof-of-concept for active integrated functionalized photonic devices based on perovskite semiconductors, representing a promising avenue for practical applications in integrated optical chips.
Passive Technologies for Future Large-Scale Photonic Integrated Circuits on Silicon: Polarization Handling, Light Non-Reciprocity and Loss Reduction

Daoxin Dai,Jared Bauters,John E Bowers

DOI: https://doi.org/10.1038/lsa.2012.1

2012-01-01

Light Science & Applications

Abstract:Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator), which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (de)multiplexers, and high-extinction-ratio polarizers. Newly developed photonic components could allow large-scale photonic integrated circuits to be built on silicon substrates. Daoxin Dai from Zhejiang University, China, alongside co-workers from the University of California, USA, have proposed several new optical technologies for use in photonic integrated circuits, which substitute or work alongside electrical circuits in optical devices. The researchers have designed new ultrashort polarization-handling devices that split high-intensity beams of light, and a ring optical isolator that reduces reflections. The team have also created a new waveguide based on silicon nitride that can guide optical waves with a minimal loss of energy. These new technologies will allow scientists to construct higher performance, more compact optical devices.
Hybrid Material Integration for Active Photonic Applications

Chengyu Chen,Yuping Chen,Zhifan Fang,Rui Ge,Jiangwei Wu,Xianfeng Chen

DOI: https://doi.org/10.1063/5.0187924

IF: 5.6

2024-01-01

APL Photonics

Abstract:The huge development of micro-/nano-manufacturing techniques on different materials has greatly expanded the possibilities of realizing on-chip multifunctional devices on photonic integrated circuits. In recent years, we have witnessed technological advancements, such as active photonic applications through hybrid integration. In this Perspective, we first summarize the integrated photonic materials, hybrid integration technologies, and corresponding coupling techniques in hybrid integration and give the technique prospects. We also introduce significant advances in hybrid integration technologies for active photonic applications, such as laser sources, optical frequency combs, and modulators, and give our views that are likely to develop rapidly. Finally, we discuss the challenges in hybrid technologies and photonic applications.
Recent Progress in Silicon‐Based Photonic Integrated Circuits and Emerging Applications

Zian Xiao,Weixin Liu,Siyu Xu,Jingkai Zhou,Zhihao Ren,Chengkuo Lee

DOI: https://doi.org/10.1002/adom.202301028

IF: 9

2023-09-12

Advanced Optical Materials

Abstract:Integrated photonics is a promising low‐cost and mass‐produced solution to a variety of technology areas. Similar to electronic integrated circuits, integrated photonic blocks are built up by many functional devices. Complex systems are all based on the fundamental building blocks to fulfill complex functions. By combining photonic chips and electronic chips, both can leverage and maximize their unique strengths. In recent years, with the further ministration of the semiconductor device in integrated circuits, power consumption and data transmission bandwidth have become insurmountable obstacles. As an integrated technology, photonic integrated circuits (PICs) have a promising potential in the post‐Moore era with more advantages in data processing, communication, and diversified sensing applications for their ultra‐high process speed and low power consumption. Silicon photonics is believed to be an encouraging solution to realize PICs because of the mature CMOS process. The past decades have witnessed a huge growth in silicon PICs. However, there is still a demand for the development of silicon PICs to enable powerful chip‐scale systems and new functionalities. In this paper, a review of the photonic components, functional blocks, and emerging applications for PICs is offered. The common photonic components are classified into several sections, including on‐chip light sources, fiber‐to‐chip couplers, photonic resonators, waveguide‐based sensors, on‐chip photodetectors, and modulators. The functional blocks of the PICs mentioned in this review are photonic memories and photonic neural networks. Finally, the paper concludes with emerging applications for further study.

materials science, multidisciplinary,optics
Integrated Photonic Passive Building Blocks on Silicon-On-Insulator Platform

Francesco Amanti,Greta Andrini,Fabrizio Armani,Fabrizio Barbato,Vittorio Bellani,Vincenzo Bonaiuto,Simone Cammarata,Matteo Campostrini,Thu Ha Dao,Fabio De Matteis,Valeria Demontis,Simone Donati,Giovanni Di Giuseppe,Sviatoslav Ditalia Tchernij,Andrea Fontana,Jacopo Forneris,Luca Frontini,Roberto Gunnella,Simone Iadanza,Ali Emre Kaplan,Cosimo Lacava,Valentino Liberali,Leonardo Martini,Francesco Marzioni,Luca Morescalchi,Elena Pedreschi,Paolo Piergentili,Domenic Prete,Valentino Rigato,Carlo Roncolato,Francesco Rossella,Matteo Salvato,Fausto Sargeni,Jafar Shojaii,Franco Spinella,Alberto Stabile,Alessandra Toncelli,Valerio Vitali

DOI: https://doi.org/10.3390/photonics11060494

IF: 2.536

2024-05-24

Photonics

Abstract:Integrated photonics on Silicon-On-Insulator (SOI) substrates is a well developed research field that has already significantly impacted various fields, such as quantum computing, micro sensing devices, biosensing, and high-rate communications. Although quite complex circuits can be made with such technology, everything is based on a few 'building blocks' which are then combined to form more complex circuits. This review article provides a detailed examination of the state of the art of integrated photonic building blocks focusing on passive elements, covering fundamental principles and design methodologies. Key components discussed include waveguides, fiber-to-chip couplers, edges and gratings, phase shifters, splitters and switches (including y-branch, MMI, and directional couplers), as well as subwavelength grating structures and ring resonators. Additionally, this review addresses challenges and future prospects in advancing integrated photonic circuits on SOI platforms, focusing on scalability, power efficiency, and fabrication issues. The objective of this review is to equip researchers and engineers in the field with a comprehensive understanding of the current landscape and future trajectories of integrated photonic components on SOI substrates with a 220 nm thick device layer of intrinsic silicon.

optics
Toward Integrated Plasmonic Circuits

Sorger Volker J.,Oulton Rupert F.,Ma Ren-Min,Zhang Xiang

DOI: https://doi.org/10.1557/mrs.2012.170

IF: 5

2012-01-01

MRS Bulletin

Abstract:Emerging telecommunication and data routing applications anticipate a photonic roadmap leading to ultra-compact photonic integrated circuits. Consequently, photonic devices will soon have to meet footprint and efficiency requirements similar to their electronic counterparts calling for extreme capabilities to create, guide, modulate, and detect deep-subwavelength optical fields. For active devices such as modulators, this means fulfilling optical switching operations within light propagation distances of just a few wavelengths. Plasmonics, or metal optics, has emerged as one potential solution for integrated on-chip circuits that can combine both high operational speeds and ultra-compact architectures rivaling electronics in both speed and critical feature sizes. This article describes the current status, challenges, and future directions of the various components required to realize plasmonic integrated circuitry.
Integrated Nonreciprocal Photonic Devices with Dynamic Modulation

Ian A. D. Williamson,Momchil Minkov,Avik Dutt,Jiahui Wang,Alex Y. Song,Shanhui Fan

DOI: https://doi.org/10.1109/JPROC.2020.3023959

2020-09-30

Abstract:Nonreciprocal components, such as isolators and circulators, are crucial components for photonic systems. In this article we review theoretical and experimental progress towards developing nonreciprocal photonic devices based on dynamic modulation. In particular, we focus on approaches that operate at optical wavelengths and device architectures that have the potential for chip-scale integration. We first discuss the requirements for constructing an isolator or circulator using dynamic modulation. We review a number of different isolator and circulator architectures, including waveguide and resonant devices, and describe their underlying operating principles. We then compare these device architectures from a system-level performance perspective, considering how their figures of merit, such as footprint, bandwidth, isolation, and insertion loss scale with respect to device parameters.

Optics,Applied Physics
Polymer-based Hybrid Integrated Photonic Devices for Silicon On-chip Modulation and Board-level Optical Interconnects

Xingyu Zhang,Amir Hosseini,Xiaohui Lin,Harish Subbaraman,Ray T. Chen

DOI: https://doi.org/10.48550/arXiv.1403.0569

2014-03-02

Abstract:The accelerating increase in information traffic demands the expansion of optical access network systems that require cost reduction of optical and photonic components. Low cost, ease of fabrication, and integration capabilities of low optical-loss polymers make them attractive for photonic applications. In addition to passive wave-guiding components, electro-optic (EO) polymers consisting of a polymeric matrix doped with organic nonlinear chromophores have enabled wide-RF-bandwidth and low-power optical modulators. Beside board level passive and active optical components, compact on-chip modulators (a few 100 micronmeters to a few millimeters) have been made possible by hybrid integration of EO polymers onto the silicon platform. This paper summarizes some of the recent progress in polymer based optical modulators and interconnects. A highly linear, broadband directional coupler modulator for use in analog optical links and compact, and low-power silicon/polymer hybrid slot photonic crystal waveguide modulators for on chip applications are presented. Recently, cost-effective roll-to-roll fabrication of electronic and photonic systems on flexible substrates has been gaining interest. A low-cost imprinted/ink-jet-printed Mach-Zehnder modulator and board-to-board optical interconnects using microlens integrated 45-degree mirror couplers compatible with the roll-to-roll fabrication platforms are also presented.

Optics
Electronic Photonic Integrated Circuits and Control Systems

A. Mahendra

2017-08-30

Abstract:Photonics and electronics have complementary strengths. Photonic systems can operate at frequencies several orders of magnitude higher than electronics, whereas electronics offers extremely high density and easily built memories. Integrated photonic-electronic systems promise to combine advantage of both, leading to advantages in accuracy, reconfigurability and energy efficiency. This work concerns of hybrid and monolithic electronic-photonic system design. Focusing on applications in photonic-chip-based optical signal processing, the contributions of this thesis are five-fold. First, a high resolution voltage supply to control the thermooptic photonic chip for time-bin entanglement is described, in which the electronics system controller can be scaled with more number of power channels and the ability to daisy-chain the devices. This controller is integrated with a silicon nitride photonic circuit, which combines low loss and tight integration, paving the way for scalable real-world quantum information processors. Second, a system identification technique embedded with feedback control for wavelength stabilization and control model in silicon nitride photonic integrated circuits is proposed. Using the system, the wavelength in thermooptic device can be stabilized in dynamic environment. Third, the generation of more deterministic photon sources with temporal multiplexing established using field programmable gate arrays (FPGAs) as controller photonic device is demonstrated for the first time. The FPGAs configuration employed phase locked loop with simple logic and synchronized delay. The result shows an enhancement to the single photon output probability without introducing additional multi-photon noise. Fourth, multiple-input and multiple-output (MIMO) control of a silicon nitride thermooptic photonic circuits incorporating Mach Zehnder interferometers (MZIs) is demonstrated for the first time using a dual proportional integral reference tracking technique. The system exhibits improved performance in term of control accuracy by reducing wavelength peak drift due to internal and external disturbances. Finally, a monolithically integrated complementary metal oxide semiconductor (CMOS) nanophotonic segmented transmitter is characterized. With segmented design, the monolithic Mach Zehnder modulator (MZM) shows a low link sensitivity and low insertion loss with driver flexibility. This transmitter holds promise for high energy efficiency applications.

Computer Science,Engineering,Physics
Heterogeneously Integrated ITO Plasmonic Mach-Zehnder Interferometric Modulator on SOI

Rubab Amin,Rishi Maiti,Yaliang Gui,Can Suer,Mario Miscuglio,Elham Heidari,Jacob B. Khurgin,Ray T. Chen,Hamed Dalir,Volker J Sorger

DOI: https://doi.org/10.48550/arXiv.2007.15457

2020-12-24

Abstract:Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines the high group-index in hybrid plasmonic with nanoscale optical modes. Following this design paradigm, here, we demonstrate a spectrally broadband, GHz-fast Mach-Zehnder interferometric modulator, exhibiting a high efficiency signified by a miniscule VpL of 95 Vum, deploying an one-micrometer compact electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Furthermore we show, that this device paradigm enables spectrally broadband operation across the entire telecommunication near infrared C-band. Such sub-wavelength short efficient and fast modulators monolithically integrated into Silicon platform open up new possibilities for high-density photonic circuitry, which is critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays, for example.

Applied Physics,Optics
Novel Functional Optoelectronic Chips Based on Nanostructures

Huang Yidong,Zhang Wei,Feng Xue,Liu Fang,Cui Kaiyu

DOI: https://doi.org/10.3788/cjl202148.1513001

2021-01-01

Abstract:Significunee A series of new physical mechanisms and unique optoelectronic properties in nanostructures provide the possibility to explore and study new optoelectronic chips. Progress Photons and phonons are important information carriers. Precise measurement of photons and phonons in micro-/nano- periodic structures allows the detection of multi-dimensional physical information and various physical quantities. Here, by manipulation of photons with metasurface units, a one-shot miniaturized ultraspectral camera with thousands of micro-spectrometers on a CMOS image sensor chip is proposed and applied to realize real-time onchip spectral imaging. Micro-spectrometers with high center-wavelength accuracy of 0.1 nm and spectral resolution of 0.8 nm are realized and the ultraspectral imaging results for a plate of fruits just under the lighting of a fluorescent lamp are obtained. For phonons, opto-mechanical crystals are studied by dealing with the interaction between photons (light) and phonons (mechanical motion). A hetero opto-mechanical crystal is proposed and demonstrated by integrating two types of periodic structures into the system, and the optical and mechanical modes can be confined separately. This separate confinement gives rise to phonon lasing with a high mechanical frequency of 6. 22 GHz. Moreover, radiation-pressure-antidamping enhanced opto-mechanical spring sensing based on a silicon nano-beam opto-mechanical structure is proposed and demonstrated, which allows for sensing resolution of similar to 10(-7). Some interesting phenomena and novel devices are arising by free electrons interacting with various nanostructures. We demonstrate the first on-chip integrated free electron light source by greatly reducing electron energy to 0.25-1. 4 keV for generating Cherenkov radiation (CR). In hexagonal boron nitride (hBN) with hyperbolic phonon polaritons, the theoretical and simulated results reveal that CR can be generated using free electrons with an extremely low kinetic energy of 1 eV, which is about two-orders of magnitude lower than that in multilayer plasmonic hyperbolic metamaterial. For generating Smith-Purcell radiation (SPR) in the deep UV region, we let an electron beam pass through a grating with 30 nm-wide slots and observe the SPR with the shortest wavelength of 230 nm and the broadband SPR with wavelengths covering 230-1100 nm. We numerically investigate the SPASER excited by free electrons, and the tunable, deep-ultraviolet laser with output power density reaching about 30 W/mu m(2) and wavelength widely tuned by varying the electron energy. Our work opens up the possibility of exploring high performance on-chip integrated free electron light sources and optoelectronic devices, and provides a way for realizing an integrated free electron laser. Introduced by Allen in 1992, orbital angular momentum (OAM) was characterized as a new freedom of lightwave. Since then, it has been attracted much research interest and shown the potential for various applications. Compared with the bulk optics, photonic integrated devices are much more compact and, the most importantly, compatible with the matured CMOS fabrication process. Since 2012, we has proposed and demonstrated integrated OAM emitters, plasmonic vortex arrays, angular momentum beam splitters and sorters, as well as the methods to identify the topological charges carried by OAM beams, etc. Here, three representative works are shown. Firstly, beams carrying OAM generated on chips are proposed for wireless optical interconnects and an integrated OAM emitter with a wide switching range of OAM modes is demonstrated. The independence of the micro-ring cavity and the gratings unit provides the flexibility to design the device and optimize the performances. Second, we propose an integrable method for generating vortex Smith-Purcell radiation by letting free electrons pass on holographic gratings and the numerical results indicate that the OAM wave with different topological charges can be obtained. Third, an angular momentum (AM) beam splitter has been demonstrated so that both spin and orbital components carried by lightwave can be distinguished simultaneously. Photons are ideal flying qubits. Photonics provides an important way to develop quantum information technologies. A quantum information system based on photonics includes functional units for quantum state generation, manipulation, and detection. How to integrate these functions on a photonic chip is a crucial technology for future quantum information applications. We have taken part in the research of integrated quantum photonic circuits since 2010. In these ten years, we have developed comprehensive solutions on integrated quantum light sources for various quantum entangled state generation at telecom bands, based on spontaneous four-wave-mixing in silicon waveguides and micro-ring resonators. We have also developed technologies for quantum state manipulation and detection on a silicon photonic chip. Utilizing high-performance energy-time entangled photon pairs generated in silicon waveguides, we have proposed and demonstrated a scheme of temporal ghost imaging based on the frequency correlation in the photon pairs, and have developed a quantum secure ghost imaging scheme based on it. Recently, we have realized a fully connected quantum key distribution (QKD) network with 40 users and 780 QKD links based on a silicon photonic quantum light source. It is the entanglement-based QKD network with the largest user number to the knowledge of authors. Conclusion and Prospect In summary, the research achievements of our research group in the field of nanostructured optoelectronic chips are reviewed. Various nanostructures have been successfully developed to control the mechanism of photons, electrons, phonons, surface plasmon polariton and their interactions, and a series of new functional optoelectronic chips have been realized, such as free electron radiation, real-time spectral imaging, phonon sensing, optical orbital angular momentum radiation, and quantum state generation and control. At present, some of the chips are being industrialized and expected to become practical in the near future.
Hybrid photonics beyond silicon

Christelle Monat,Yikai Su

DOI: https://doi.org/10.1063/5.0002005

IF: 5.6

2020-01-01

APL Photonics

Abstract:In the past years, significant progress has been made on the realization of high performance building blocks in photonic circuits, such as ultra-low loss waveguides, monolithic lasers, high-speed modulators, and high efficiency photodetectors. However, toward large scale integration with complete functions and breakthrough performance, there are still many challenging problems to solve. While silicon has proved to be an asset material for integrated optics, the combination of other materials with complementary properties has turned out to be critical for the realization of specific advanced photonic devices. Yet, the major challenge has been the materials' differences that cause difficulties in hybrid integration. APL Photonics' keen interest in the field leads us to offer this editorial, which will present a broad overview of the recent progress, current challenges, and future opportunities of hybrid photonics integration.
Non-invasive characterization of cascaded SOAs on InP-based photonic integrated circuits

Xudong Wang,Bin Shi,Lin Liu,Desalegn Wolde Feyisa,Juanxiu Liu,Shangjian Zhang,Yutang Ye,Yong Liu,Ripalta Stabile

DOI: https://doi.org/10.1364/oe.534638

IF: 3.8

2024-09-21

Optics Express

Abstract:Xudong Wang, Bin Shi, Lin Liu, Desalegn Wolde Feyisa, Juanxiu Liu, Shangjian Zhang, Yutang Ye, Yong Liu, Ripalta Stabile Semiconductor optical amplifiers (SOAs) are widely used as active elements in optical switching networks for their features of loss ... [Opt. Express 32, 36021-36030 (2024)]

optics

Active Photonic Integrated Circuits Using Semiconductor Optical Amplifiers

An Integrated Optical Circuit Architecture for Inverse-Designed Silicon Photonic Components

Multifunctional Mixed Analog/digital Signal Processor Based on Integrated Photonics

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Development of Silicon Photonic Devices for Optical Interconnects

Substrate-blind Photonic Integration

Silicon Photonic Network-on-chip and Enabling Components

Photonic-integrated circuits and components using quantum well intermixing

Inorganic perovskite-based active multifunctional integrated photonic devices

Passive Technologies for Future Large-Scale Photonic Integrated Circuits on Silicon: Polarization Handling, Light Non-Reciprocity and Loss Reduction

Hybrid Material Integration for Active Photonic Applications

Recent Progress in Silicon‐Based Photonic Integrated Circuits and Emerging Applications

Integrated Photonic Passive Building Blocks on Silicon-On-Insulator Platform

Toward Integrated Plasmonic Circuits

Integrated Nonreciprocal Photonic Devices with Dynamic Modulation

Polymer-based Hybrid Integrated Photonic Devices for Silicon On-chip Modulation and Board-level Optical Interconnects

Electronic Photonic Integrated Circuits and Control Systems

Heterogeneously Integrated ITO Plasmonic Mach-Zehnder Interferometric Modulator on SOI

Novel Functional Optoelectronic Chips Based on Nanostructures

Hybrid photonics beyond silicon

Non-invasive characterization of cascaded SOAs on InP-based photonic integrated circuits