p-N heterostructural sensor with SnO-SnO2 for fast NO2 sensing response properties at room temperature

Hai Yu,Tianye Yang,Zhiyang Wang,Zhifang Li,Qi Zhao,Mingzhe Zhang
DOI: https://doi.org/10.1016/j.snb.2017.11.165
2018-01-01
Abstract:•The SnO-SnO2 p-N (Egp < Egn) heterostructures are prepared by hydrothermal strategy and annealing condition.•The most conceivable energy band are the narrower the heterojunction valence band offsets (ΔEV = 3.31 eV), the lower the required energy for the transition of electrons, and the intrinsic “O” vacancies creating defect states close to the conduction band minimum own strongly sensitive at low temperature due to low activation energy.•This p-N heterostructures sensor exhibited excellent performances for NO2 sensing at room temperature in terms of relative sensing selectivity, fast response time, high sensitivity, and low LOD (0.1 ppm) by a stable and repeatable response pattern.
What problem does this paper attempt to address?