Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides
Vaidotas Mišeikis,Simone Marconi,Marco A. Giambra,Alberto Montanaro,Leonardo Martini,Filippo Fabbri,Sergio Pezzini,Giulia Piccinini,Stiven Forti,Bernat Terrés,Ilya Goykhman,Louiza Hamidouche,Pierre Legagneux,Vito Sorianello,Andrea C. Ferrari,Frank H. L. Koppens,Marco Romagnoli,Camilla Coletti
DOI: https://doi.org/10.1021/acsnano.0c02738
2020-09-11
Abstract:We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity 8 x 10$^{10}$ $cm^{-2}$ at the charge neutrality point, and a large Seebeck coefficient 140 ${\mu}$V K$^{-1}$, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.
Applied Physics