Abstract:HfO2, as a gate dielectric material for the charge trapping memory, has been studied extensively due to its merits such as high k value, good thermal stability, and conduction band offset relative to Si, etc.. In order to understand the reason why the charge trapping efficiency is improved by high k capture layer with respect to charge trapping type memory, the variation of HfO2 crystal texture induced by oxygen vacancy and the influences of it are investigated using the first principle calculation based on density functional theory. Results show that the distance of the nearest neighbor oxygen atom from oxygen vacancy is markedly reduced after optimization, whereas the decrease of distances between the next nearest neighbor oxygen atom from oxygen vacancy and hafnium is less. The change of local crystal lattice is caused by optimized oxygen vacancy for it significantly changes the local lattice, but rarely influences the far lattice. Deep energy level and density of electron states in conduction band are contributed by Hf atoms, while the density of electron states in valence band is contributed by O atoms. The local density of electron states in each element and the total density of electron states in the optimization system are all larger than those in the system without optimization, and the sum of the local densities of electron states is less than the total density of electron states. The trapped charges are moving mainly around the oxygen vacancy and the adjacent atoms of oxygen in the optimization system, but the charges are without optimization throughout the system. The local energy of charge is increased in optimized defect system, while the local energy of charge is conspicuously reduced in the system without optimization, i.e. lattice variation without saturation characteristic has a large effect on the local energy of charge. Results further prove that the change of crystal lattice induced by oxygen vacancy has strong ability to capture charge, which helps improve the features of memory.

Oxygen Vacancy Chain and Conductive Filament Formation in Hafnia

Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide

Oxygen Migration Around the Filament Region in HfOx Memristors

A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory

Percolation conductivity in hafnium sub-oxides

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties

Exploring the Direction-Dependency of Conductive Filament Formation and Oxygen Vacancy Migration Behaviors in HfO2-based RRAM

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

Effect of Oxygen Vacancy on Lattice and Electronic Prop Erties of HfO2 by Means of Density Function Theory Study

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2

Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films

A DFT+$U$+$V$ study of pristine and oxygen-deficient HfO$_2$ with self-consistent Hubbard parameters

Hafnia for Analog Memristor: Influence of Stoichiometry and Crystalline Structure

Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in HfO$_2$

Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfOx Thin Films

Ab Initio Study of Oxygen Vacancy Filament Formation at Ta/HfO2 Interface