Abstract:In X-ray photoelectron spectroscopy (XPS), the dramatic changes in the core level binding energies can provide strong indications of transitions between a more dielectric and a more metallic CoFe 2 O 4 and NiCo 2 O 4 films. These significant changes in the XPS core level binding energies are possible with a combination of annealing and oxygen exposure, although the behavior of the CoFe 2 O 4 and NiCo 2 O 4 films are very different. The XPS Co and Fe 2p 3/2 core levels for the CoFe 2 O 4 thin film at room temperature shows large photovoltaic surface charging leading to binding energy shifts, characteristic of a highly dielectric (or insulating) surface at room temperature. This photovoltaic charging, seen in the XPS binding energies of the Co and Fe 2p 3/2 core levels, decreased with increasing temperature, and saturated at a lower apparent binding energy above 455 K. This shows that the prepared CoFe 2 O 4 thin film can be dielectric at room temperature but more metallic at elevated temperatures. The dielectric nature of the CoFe 2 O 4 film was restored only when the film was annealed in sufficient oxygen, indicating that the oxygen vacancies play a role in the transition of the film from dielectric (or insulating) to metallic. In contrast, the XPS studies of the initially metallic NiCo 2 O 4 thin films showed that annealing of NiCo 2 O 4 thin film led to a more dielectric or insulating film. The original more metallic character of the NiCo 2 O 4 film can be restored when annealed in sufficient oxygen. Effective activation energies are estimated for the carriers from a modified Arrhenius-type model applied to the core level binding energy changes of the CoFe 2 O 4 and NiCo 2 O 4 films, as a function of temperature, but the origin of the carriers is not uniquely identified. This work illustrates routes to regulate the surface metal-to-insulator transition, especially in the case of insulating NiCo 2 O 4 which can undergo reversible metal-to-insulator transition with temperature.

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