Abstract:Internet of Things applications, including medical diagnostics, imaging and industrial process controls, pollution monitoring or real-time motion control, push the extension of the Si photonics towards mid-infrared range. In recent years, group IV SiGeSn-based optoelectronic devices including light emitting, detectors, modulators, and CMOS devices have been developed. The main advantage of SiGeSn is the bandgap tunability in the range between 1.5 to 5 μm via Si and Sn compositions. Remarkably, the GeSn binary alloy becomes a direct bandgap semiconductor at a relative low Sn content of about 7-8 at.% opening the quest for the realization of monolithically integrated laser sources on Si. In this direction, from the first laser emission proof in 2015 remarkable progress has been done. Supported by epitaxial growth success, processing technology, and cavity design, the laser emission of optically pumped was continuously increased from 80K to 270K. The main role here was played by increasing the Sn content up a concentration of 17 at.%. The next major improvement came from layer transfer technology allowing defect engineering and heat management. Their combination made possible room temperature lasing. However, the real life application requires low laser threshold. Here the use of multiple quantum wells based on SiGeSn/GeSn heterostructures and strain engineering allow a remarkable threshold reduction to values of about 1 kA/cm 2 . Interestingly, modeling shows that the very epitaxial challenging of having high Sn contents can be reduced by band structure engineering via introducing tensile strain and, in addition, larger gains are possible compared with high-Sn strain free layers. The optical laser spectrum at 0 °C for a GeSn layer under 1 % biaxial tensile strain is shown in Fig 1a. The next step is the realization of an electrical pumped GeSn laser. The first data indicate that both waveguide and microdisk cavities can be electrically pumped leading to low temperature laser emission. The effect of the geometry and strain relaxation of under-etched cavities on the laser emission is under study. Figure 1b shows an exemplary spectrum and current-in light-out (LI) curve for a device with a SiGeSn/GeSn heterostructure taken at 50 K. Figure 1

GeSn-based Light Sources and Photoconductors Towards Integrated Photonics for the Mid-Infrared

Advances in GeSn alloys for MIR applications

Development of SiGeSn Technique Towards Integrated Mid-Infrared Photonics Applications

Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors

Si-based GeSn photodetectors towards mid-infrared imaging applications

Mid-infrared Integrated Photonics on Silicon: a Perspective

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Mid-infrared silicon photonic lasers based on GeSn slab waveguide on silicon

Mid-infrared GeSn Electro-Absorption Optical Modulators on Silicon

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Lasing in Group-IV materials

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Integrated Photonics for Infrared Spectroscopic Sensing

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

Gesn Alloys: From Optical to Electrical Pumped Lasers

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires

Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 Μm for Low-Cost Infrared Imaging

Continuous-wave GeSn light emitting diodes on silicon with $2.5 \, μ$m room-temperature emission

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser