Abstract:The micro- and nanostructures of III-nitride semiconductors captivate strong interest owing to their distinctive properties and myriad potential applications. Nevertheless, challenges endure in managing the damage inflicted on crystals through top-down processes or achieving extensive control over the large-area growth of these microstructures via bottom-up methods, thereby impacting their optical and electronic properties. Here, we present novel epitaxially grown 3D GaN truncated pyramid arrays (TPAs) on patterned Si substrates, devoid of any catalyst. These GaN TPAs feature highly ordered, large-scale structures, attributed to the utilization of 3D Si substrates and thin AlN interlayers to alleviate epitaxial strains and limit dislocation formation. Comprehensive characterization via scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and cathodoluminescence attests to the superior structural and optical attributes of these crystals. Furthermore, photoluminescence and ultraviolet (UV)-visible diffuse reflectance spectroscopy reveal sharp band-edge emission and significant light trapping in the UV bands. Employing these GaN TPAs, we constructed metal-semiconductor-metal visible-blind UV photodetectors (PDs) incorporating Ti3C2 MXene as Schottky electrodes. These PDs display exceptional responsivity, achieving 5.32 × 103 mA/W at 255 nm and an ultrahigh UV/visible rejection ratio (R255nm/R450nm) approaching 106, which are 1-2 orders of magnitude higher than most recently reported works. This exploration showcases novel GaN-based microstructures characterized by uniformity, ordered geometry, and exemplary crystalline integrity, paving the way for developing optoelectronic applications.

Growth, Characterization, and Application of Well-defined Separated Gan-based Pyramid Array on Micropatterned Sapphire Substrate

Controllable Growth of Aligned Monocrystalline CsPbBr3 Microwire Arrays for Piezoelectric‐Induced Dynamic Modulation of Single‐Mode Lasing

Periodic Organic–Inorganic Halide Perovskite Microplatelet Arrays on Silicon Substrates for Room‐Temperature Lasing

Broadband Emission of Asymmetric Pyramids obtained by Laser Drilling and SAG for Application of Phosphor Free White LEDs

Wafer-Scale Semipolar Micro-Pyramid Lighting-Emitting Diode Array

Pattern Design of and Epitaxial Growth on Patterned Sapphire Substrates for Highly Efficient Gan-Based Leds

Super Flexible GaN Light Emitting Diodes Using Microscale Pyramid Arrays Through Laser Lift-off and Dual Transfer.

Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of Gan-Based Light-Emitting Diodes

Highly Integrated InGaN/GaN Semipolar Micro-Pyramid Light-Emitting Diode Arrays by Confined Selective Area Growth

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

3D Nanohole Arrays Generated by Spherical-Lens Photolithography

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Color Tunable Inverted Pyramid Micro-LEDs Based on Nano-Patterned Sapphire Substrates

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet Photodetection

Research progress of Patterned Sapphire Substrate for GaN-Based Light-Emitting Diodes

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography

Nanopatterned Graphene: Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes (Adv. Funct. Mater. 31/2020)

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates