Abstract:Normally off AlGaN/GaN high electron mobility transistors with a p-type gate are promising for power switching applications, with advantages of low energy consumption and safe operation. In this work, p-NiO is employed as a gate stack, and the interfacial reconstruction and band structure modification at the p-NiO/AlGaN interface have been demonstrated to manipulate channel transport of AlGaN/GaN high electron mobility transistors by post-annealing. In addition to achieving a positive threshold voltage of 0.6 V and a large saturation output current of 520 mA/mm, we found that the gate leakage and On/Off drain current ratio can be improved significantly by more than 104 due to the p-NiO/AlGaN interfacial reconstruction. However, high annealing temperature also results in an increasing ON-resistance and a dramatically increased knee voltage (VK), which can be attributed to the formation of an ultra-thin γ-Al2O3 layer and the substitution of O on N site as a shallow donor at the p-NiO/AlGaN interface confirmed by experimental analyses. Theoretical calculations indicate that such interface reconstruction facilitates an additional potential well at the p-NiO/AlGaN interface to which electrons are spilled out from a two-dimensional electron gas channel under high forward gate voltage, resulting in the increased VK. Finally, an optimized annealing condition was confirmed that can eliminate this increased VK phenomenon and simultaneously remain these significantly improved device performances. These findings provide deep understanding of the performance manipulation of AlGaN high electron mobility transistors, which is very important for engineering the p-NiO/AlGaN interface toward high-performance and stable devices.

Band Alignment Between PEALD-AlNO and AlGaN/GaN Determined by Angle-Resolved X-ray Photoelectron Spectroscopy

Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3

Band Alignment of AlN/β-Ga2O3 Heterojunction Interface Measured by X-Ray Photoelectron Spectroscopy

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

PEALD Induced Interface Engineering of AlNO/AlGaN/GaN MIS Diode with Alternate Insertion of AlN in Al2O3

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Band Alignment of B0.14Al0.86N/Al0.7Ga0.3N Heterojunction

Nearly-zero Valence Band and Large Conduction Band Offset at BAlN/GaN Heterointerface for Optical and Power Device Application

Band Alignment of HfAlO/GaN (0 0 0 1) Determined by X-ray Photoelectron Spectroscopy: Effect of in Situ SiH4 Passivation

An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

Band Alignment Regulation of HfO2/SiC Heterojunctions Induced by PEALD with in Situ NH3-plasma Passivation

Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model

On the surface oxidation and band alignment of ferroelectric Sc0.18Al0.82N/GaN heterostructures

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Valence And Conduction Band Offsets Of Beta-Ga2o3/Aln Heterojunction

BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor

Impacts of Oxygen Source on Band Alignment of ALD Al2O3/(α-, Ε-)Ga2o3 Interface

Effects of Polycrystalline AlN Film on the Dynamic Performance of AlGaN/GaN High Electron Mobility Transistors

NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs