Resistive Switching Effect Enhanced by Illumination in Ag/Geo2/Fto Device

Bai Sun,Yonghong Liu,Jinggao Wu,Peng Chen
DOI: https://doi.org/10.1166/nnl.2015.1962
2015-01-01
Nanoscience and Nanotechnology Letters
Abstract:The resistive switching is an outstanding candidate for next-generation nonvolatile random-access memory device. In this work, resistive switching effect of Ag/GeO2/FTO device is demonstrated. In particular, the resistive switching characteristics can be enhanced by illumination. The device can maintain superior reversible stability over 100 cycles with an OFF/ON-state resistance ratio of about 103 under illumination at room temperature. This study is useful for exploring the promising light-controlled resistive switching device.
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