Highly Sensitive Near Infrared Organic Phototransistors Based on Conjugated Polymer Nanowire Networks

Yanlian Lei,Ning Li,Wing-Kin Edward Chan,Beng S. Ong,Furong Zhu
DOI: https://doi.org/10.1016/j.orgel.2017.05.029
IF: 3.868
2017-01-01
Organic Electronics
Abstract:Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of similar to 246 A/W under an NIR illumination source (850 nm) with a light intensity of similar to 0.1 mW/cm(2). This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors. (C) 2017 Elsevier B.V. All rights reserved.
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