Abstract:Two-dimensional (2D) hybrid perovskite sandwiched between two long-chain organic layers is an emerging class of low-cost semiconductor materials with unique optical properties and improved moisture stability. Unlike conventional semiconductors, ion migration in perovskite is a unique phenomenon possibly responsible for long carrier lifetime, current–voltage hysteresis, and low-frequency giant dielectric response. While there are many studies of ion migration in bulk hybrid perovskite, not much is known for its 2D counterparts, especially for ion migration induced by light excitation. Here, we construct an exfoliated 2D perovskite/carbon nanotube (CNT) heterostructure field effect transistor (FET), not only to demonstrate its potential in photomemory applications, but also to study the light induced ion migration mechanisms. We show that the FET I–V characteristic curve can be regulated by light and shows two opposite trends under different CNT oxygen doping conditions. Our temperature-dependent study indicates that the change in the I–V curve is probably caused by ion redistribution in the 2D hybrid perovskite. The first principle calculation shows the reduction of the migration barrier of I vacancy under light excitation. The device simulation shows that the increase of 2D hybrid perovskite dielectric constant (enabled by the increased ion migration) can change the I–V curve in the trends observed experimentally. Finally, the so synthesized FET shows the multilevel photomemory function. Our work shows that not only we could understand the unique ion migration behavior in 2D hybrid perovskite, it might also be used for many future memory function related applications not realizable in traditional semiconductors.A two-dimensional perovskite/carbon nanotube heterostructure was constructed not only to study light induced ion migration mechanisms, but also to demonstrate its potential in photomemory applications.

Microsecond dark-exciton valley polarization memory in 2D heterostructures

Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures.

Internal and external polarization memory loss in single quantum dots

Magnon Dark Modes and Gradient Memory

Long room-temperature valley lifetimes of localized excitons in MoS_2 quantum dots

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure

Nonvolatile Electrical Switching of Optical and Valleytronic Properties of Interlayer Excitons

On-Demand Photon Storage and Retrieval with a Solid-State Photon Molecule at Room Temperature

Momentum-Dark Intervalley Exciton in Monolayer Tungsten Diselenide Brightened Via Chiral Phonon.

Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D Van Der Waals Heterostructure for In-Sensor Reservoir Computing at the Optical Communication Band.

Room-Temperature Valley Polarization in Atomically Thin Semiconductors via Chalcogenide Alloying

Valley coherent exciton-polaritons in a monolayer semiconductor

Long-Lived Nanosecond Spin Relaxation And Spin Coherence Of Electrons In Monolayer Mos2 And Ws2

Light-Enhanced Ion Migration in Two-Dimensional Perovskite Single Crystals Revealed in Carbon Nanotubes/Two-Dimensional Perovskite Heterostructure and Its Photomemory Application

A pr 2 01 8 High-performance Raman quantum memory with optimal control

Dichroic Spin–valley Photocurrent in Monolayer Molybdenum Disulphide

Long valley lifetime of dark excitons in single-layer WSe2

Laser-amplified Nonvolatile Charge Trapping Effect in Semiconductor Quantum Dot Structures

All-Optical Valley Polarization Switch Via Controlling Spin-Triplet and Spin-Singlet Interlayer Exciton Emission in WS2/WSe2 Heterostructure.

Simultaneously Enhanced Emission and Valley Polarization of Dark Excitons of Monolayer WSe 2 Using the Dual Effect of Strain and Magnetic Proximity

Optical Valley Hall Effect of 2D Excitons in Hyperbolic Metamaterial