Abstract:Single-particle irradiation is a typical condition in space applications, which could be detrimental for electronic devices through processes such as single-event upset or latch-up. For functional devices made of few-atom-thick monolayers that are entirely exposed to the environment, the irradiation effects could be manifested through localized or delocalized electronic excitation, in addition to lattice defect creation. In this work, we explore the single-H irradiation effects on bare or coated graphene monolayers. Real-time time-dependent density functional theory-based first-principles calculation results elucidate the evolution of charge densities in the composite system, showing notable charge excitation but negligible charge deposition. A hexagonal boron nitride coating layer does not protect graphene from these processes. Principal component analysis demonstrates the dominance of localized excitation accompanied by nuclear motion, bond distortion and vibration, as well as a minor contribution from delocalized plasmonic excitation. The significance of coupled electron-ion dynamics in modulating the irradiation processes is identified from comparative studies on the spatial and temporal patterns of excitation for unconstrained and constrained lattices. The stopping power or energy deposition is also calculated, quantifying the dissipative nature of charge density excitation. This study offers fundamental understandings of the single-particle irradiation effects on optoelectronic devices constructed from low-dimensional materials, and inspires unconventional techniques to excite the electrons and ions in a controllable way.

Additivity of kinetic and potential energy contributions in modification of graphene supported on SiO2

Modification of Graphene Supported on Sio2 Substrate with Swift Heavy Ions from Atomistic Simulation Point

Effect of SiO2 substrate on the irradiation-assisted manipulation of supported graphene: a molecular dynamics study.

A Lennard-Jones Potential Based Cohesive Zone Model and Its Application in Multiscale Damage Simulation of Graphene Reinforced Nanocomposites

Mechanism of the Defect Formation in Supported Graphene by Energetic Heavy Ion Irradiation: the Substrate Effect

Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene.

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

Damage in graphene due to electronic excitation induced by highly charged ions

Fabrication of Nanopores in a Graphene Sheet with Heavy Ions: A Molecular Dynamics Study

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Manipulation of the graphene surface potential by ion irradiation

Electronic properties of graphene altered by substrate surface chemistry and externally applied electric field

Molecular Dynamics Study on the Irradiation-Induced Damage in SiC

Investigation on Gallium Ions Impacting Monolayer Graphene

Ion implantation of low energy Si into graphene: insight from computational studies

Electronic excitation in graphene under single-particle irradiation

Self‐Passivation of Defects: Effects of High‐Energy Particle Irradiation on the Elastic Modulus of Multilayer Graphene

Understanding and Controlling the Substrate Effect on Graphene Electron-Transfer Chemistry Via Reactivity Imprint Lithography.

Substrate surface effects on electron-irradiated graphene

Inducing electronic changes in graphene through silicon (100) substrate modification.

Theoretical Investigations on the Growth of Graphene by Oxygen-Assisted Chemical Vapor Deposition