Large Perpendicular Magnetic Anisotropy in Ta/CoFeB/MgO on Full-Coverage Monolayer MoS 2 and First-Principles Study of Its Electronic Structure
Ziqi Zhou,Paul Marcon,Xavier Devaux,Philippe Pigeat,Alexandre Bouché,Sylvie Migot,Abdallah Jaafar,Rémi Arras,Michel Vergnat,Lei Ren,Hans Tornatzky,Cedric Robert,Xavier Marie,Jean-Marie George,Henri-Yves Jaffrès,Mathieu Stoffel,Hervé Rinnert,Zhongming Wei,Pierre Renucci,Lionel Calmels,Yuan Lu,Alexandre Bouché,Rémi Arras,Henri-Yves Jaffrès,Hervé Rinnert
DOI: https://doi.org/10.1021/acsami.1c08805
2021-07-01
Abstract:A perpendicularly magnetized spin injector with a high Curie temperature is a prerequisite for developing spin optoelectronic devices on two-dimensional (2D) materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with large perpendicular magnetic anisotropy (PMA) on full-coverage monolayer (ML) molybdenum disulfide (MoS<sub>2</sub>). A large perpendicular interface anisotropy energy of 0.975 mJ/m<sup>2</sup> has been obtained at the CoFeB/MgO interface, comparable to that observed in magnetic tunnel junction systems. It is found that the insertion of MgO between the ferromagnetic (FM) metal and the 2D material can effectively prevent the diffusion of the FM atoms into the 2D material. Moreover, the MoS<sub>2</sub> ML favors a MgO(001) texture and plays a critical role in establishing the large PMA. First-principles calculations on a similar Fe/MgO/MoS<sub>2</sub> structure reveal that the MgO thickness can modify the MoS<sub>2</sub> band structure, from a direct band gap with 3ML-MgO to an indirect band gap with 7 ML-MgO. The proximity effect induced by Fe results in splitting of 10 meV in the valence band at the Γ point for the 3ML-MgO structure, while it is negligible for the 7 ML-MgO structure. These results pave the way to develop RT spin optoelectronic devices based on 2D transition-metal dichalcogenide materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c08805?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c08805</a>.Procedure to extract effective anisotropy energy <i>K</i><sub>eff</sub>, details on extracting <i>K</i><sub>eff</sub> for the samples with different thicknesses of CoFeB, details on extracting <i>K</i><sub>eff</sub> for the samples with different annealing temperatures, element distribution profile and B diffusion in MgO for the sample capped with Pt, band structure of the primitive (hexagonal) and conventional (rectangular) unit cells of a MoS<sub>2</sub> ML, and first-principles calculations for the MoS<sub>2</sub>/3 ML-MgO/7 ML-Fe structure (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c08805/suppl_file/am1c08805_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology