Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Magnetic Transport Property of Nife/Wse2/Nife Spin Valve Structure

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Spin-Valve Effect in NiFe/MoS2/NiFe Junctions.

Weyl Node-Participated Magnetoresistance and Nonreciprocal Transport in Two-Dimensional Tellurene Nanostructures

Spin Filtering Effect in All-Van Der Waals Heterostructures with WSe2 Barriers

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Edge-enhanced Negative Magnetoresistance in a WSe2/Fe3GeTe2 Heterostructure

Large Negative Magnetoresistance in All‐2D‐Materials‐Based Spin Valves

Intrinsic Negative Magnetoresistance in Van Der Waals FeNbTe2 Single Crystals

Experimental Demonstration of Angle-Dependent GMR Effect in Py/WSe₂/Co Spin Valve Structure

Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6

Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions

Gate-tunable Negative Longitudinal Magnetoresistance in the Predicted Type-Ii Weyl Semimetal WTe2

Negative Magnetoresistance in Weyl Semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

Negative Magnetoresistance in Dirac Semimetal Cd 3 As 2 with In-Plane Magnetic Field Perpendicular to Current

Spin-selective magneto-conductivity in WSe$_2$

Spin manipulation by giant valley-Zeeman spin-orbit field in atom-thick WSe2