Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

B21-O-05 Atomic Motion in Monolayer Molybridenum Disulfide Probed by In-Situ ADF-STEM

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Direct Imaging of Kinetic Pathways of Atomic Diffusion in Monolayer Molybdenum Disulfide.

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Atomistic Dynamics of Sulfur-Deficient High-Symmetry Grain Boundaries in Molybdenum Disulfide

In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

Atomically Engineering Metal Vacancies in Monolayer Transition Metal Dichalcogenides

Single atom chemical identification of TMD defects in ambient conditions

Direct Visualization of Electric Field induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide

Exploring atomic defects in molybdenum disulphide monolayers

Atomically Self-Healing of Structural Defects in Monolayer WSe 2

Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides

Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors

Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS2 : Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding

Atomic-scale EDS Mapping for Chemical Imaging and Quantification of Interdiffusion in Self-assembled Vertically Aligned Nanocomposite Thin Films

ATOMIC LEVEL STUDIES OF THE DYNAMICS AND DYNAMICAL BEHAVIOR OF SOLID SURFACES

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2

Direct visualization of defect-controlled diffusion in van der Waals gaps

Probing Functional Structures, Defects, and Interfaces of 2D Transition Metal Dichalcogenides by Electron Microscopy

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory